Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes

B. H. Park; L. S. Li; B. J. Gibbons; J. Y. Huang; Q. X. Jia

doi:10.1063/1.1412822

Photovoltaic response and dielectric properties of epitaxial anatase-TiO₂ films grown on conductive La_0.5Sr_0.5CoO₃ electrodes

B. H. Park
, L. S. Li
, B. J. Gibbons
, J. Y. Huang
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory
Konkuk University

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

We have grown epitaxial anatase-TiO₂ (001) films on La_0.5Sr_0.5CoO₃ (001) bottom electrodes using pulsed-laser deposition. The small lattice mismatch (0.5%) between the anatase-TiO₂ and the La_0.5Sr_0.5CoO₃ makes it possible to grow anatase-TiO₂ films with excellent crystallinity on conductive metal oxides. The photovoltaic properties of the epitaxial anatase-TiO₂ on the La_0.5Sr_0.5CoO₃ were characterized using a Kelvin probe. The optical band-gap energy was found to be 3.05 eV. The dielectric properties of the epitaxial anatase-TiO₂ films were characterized using a capacitor structure of Au/anatase-TiO₂/La_0.5Sr_0.5CoO₃ on a LaAlO₃ substrate. The dielectric dispersion exhibited a power-law dependence, and the dielectric constant measured at room temperature and 1 MHz was 38.

Original language	English
Pages (from-to)	2797-2799
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	17
DOIs	https://doi.org/10.1063/1.1412822
State	Published - Oct 22 2001

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title = "Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes",

abstract = "We have grown epitaxial anatase-TiO2 (001) films on La0.5Sr0.5CoO3 (001) bottom electrodes using pulsed-laser deposition. The small lattice mismatch (0.5\%) between the anatase-TiO2 and the La0.5Sr0.5CoO3 makes it possible to grow anatase-TiO2 films with excellent crystallinity on conductive metal oxides. The photovoltaic properties of the epitaxial anatase-TiO2 on the La0.5Sr0.5CoO3 were characterized using a Kelvin probe. The optical band-gap energy was found to be 3.05 eV. The dielectric properties of the epitaxial anatase-TiO2 films were characterized using a capacitor structure of Au/anatase-TiO2/La0.5Sr0.5CoO3 on a LaAlO3 substrate. The dielectric dispersion exhibited a power-law dependence, and the dielectric constant measured at room temperature and 1 MHz was 38.",

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T1 - Photovoltaic response and dielectric properties of epitaxial anatase-TiO2 films grown on conductive La0.5Sr0.5CoO3 electrodes

AU - Park, B. H.

AU - Li, L. S.

AU - Gibbons, B. J.

AU - Huang, J. Y.

AU - Jia, Q. X.

PY - 2001/10/22

Y1 - 2001/10/22

N2 - We have grown epitaxial anatase-TiO2 (001) films on La0.5Sr0.5CoO3 (001) bottom electrodes using pulsed-laser deposition. The small lattice mismatch (0.5%) between the anatase-TiO2 and the La0.5Sr0.5CoO3 makes it possible to grow anatase-TiO2 films with excellent crystallinity on conductive metal oxides. The photovoltaic properties of the epitaxial anatase-TiO2 on the La0.5Sr0.5CoO3 were characterized using a Kelvin probe. The optical band-gap energy was found to be 3.05 eV. The dielectric properties of the epitaxial anatase-TiO2 films were characterized using a capacitor structure of Au/anatase-TiO2/La0.5Sr0.5CoO3 on a LaAlO3 substrate. The dielectric dispersion exhibited a power-law dependence, and the dielectric constant measured at room temperature and 1 MHz was 38.

AB - We have grown epitaxial anatase-TiO2 (001) films on La0.5Sr0.5CoO3 (001) bottom electrodes using pulsed-laser deposition. The small lattice mismatch (0.5%) between the anatase-TiO2 and the La0.5Sr0.5CoO3 makes it possible to grow anatase-TiO2 films with excellent crystallinity on conductive metal oxides. The photovoltaic properties of the epitaxial anatase-TiO2 on the La0.5Sr0.5CoO3 were characterized using a Kelvin probe. The optical band-gap energy was found to be 3.05 eV. The dielectric properties of the epitaxial anatase-TiO2 films were characterized using a capacitor structure of Au/anatase-TiO2/La0.5Sr0.5CoO3 on a LaAlO3 substrate. The dielectric dispersion exhibited a power-law dependence, and the dielectric constant measured at room temperature and 1 MHz was 38.

UR - https://www.scopus.com/pages/publications/0035934799

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JF - Applied Physics Letters

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Photovoltaic response and dielectric properties of epitaxial anatase-TiO₂ films grown on conductive La_0.5Sr_0.5CoO₃ electrodes

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