Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells

S. T. Lee; A. Petrou; M. Dutta; J. Pamulapati; P. G. Newman; L. P. Fu

doi:10.1103/PhysRevB.51.1942

Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells

S. T. Lee
, A. Petrou
, M. Dutta
, J. Pamulapati
, P. G. Newman
, L. P. Fu

Physics

SUNY Buffalo
U.S. Army Research Laboratory
Emory University

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband e1 lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy.

Original language	English
Pages (from-to)	1942-1945
Number of pages	4
Journal	Physical Review B-Condensed Matter
Volume	51
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.51.1942
State	Published - 1995

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10.1103/PhysRevB.51.1942

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abstract = "We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband e1 lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy.",

author = "Lee, \{S. T.\} and A. Petrou and M. Dutta and J. Pamulapati and Newman, \{P. G.\} and Fu, \{L. P.\}",

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AU - Lee, S. T.

AU - Petrou, A.

AU - Dutta, M.

AU - Pamulapati, J.

AU - Newman, P. G.

AU - Fu, L. P.

PY - 1995

Y1 - 1995

N2 - We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband e1 lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy.

AB - We have studied the photoluminescence spectra from GaAs/AlAs quantum wells doped with silicon donors in the AlAs barriers. The GaAs well width in these structures was chosen so that the lowest conduction subband e1 lies above the donor states. An impurity-related feature is identified as the donor-to-valence-band transition. A comparison of the energy of this feature with that of the AlAs X-valley-to-valence-band transition yields the donor binding energy.

UR - https://www.scopus.com/pages/publications/0041369177

U2 - 10.1103/PhysRevB.51.1942

DO - 10.1103/PhysRevB.51.1942

M3 - Article

AN - SCOPUS:0041369177

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EP - 1945

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

IS - 3

ER -

Photoluminescence study of silicon donors in n-type modulation-doped GaAs/AlAs quantum wells

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