Photoluminescence study of Be-acceptors in GaInNAs epilayers

Y. Tsai; B. Barman; T. Scrace; M. Fukuda; V. R. Whiteside; I. R. Sellers; M. Leroux; M. Al Khalfioui; A. Petrou

doi:10.1063/1.4906409

Photoluminescence study of Be-acceptors in GaInNAs epilayers

Y. Tsai
, B. Barman
, T. Scrace
, M. Fukuda
, V. R. Whiteside
, I. R. Sellers
, M. Leroux
, M. Al Khalfioui
, A. Petrou

SUNY Buffalo
University of Oklahoma
CRHEA-CNRS
Université Côte d'Azur

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We have studied Be-acceptors in a p-type GaInNAs epilayer using magneto-luminescence spectroscopy. The band edge photoluminescence (PL) spectra at T = 7 K contain two features: the first is associated with the free exciton while the second with the conduction band to acceptor (CB → A) transition. The intensity of the latter decreases with increasing temperature while the excitonic feature survives up to T = 250 K. From the energies of the two PL features, as well as the exciton binding energy in GaInNAs, we determined the Be-acceptor binding energy to be equal to 42 meV. The energy of the CB → A feature varies linearly with magnetic field B and has a slope of 5.5×10-4 eV/T.

Original language	English
Article number	045705
Journal	Journal of Applied Physics
Volume	117
Issue number	4
DOIs	https://doi.org/10.1063/1.4906409
State	Published - Jan 28 2015

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title = "Photoluminescence study of Be-acceptors in GaInNAs epilayers",

abstract = "We have studied Be-acceptors in a p-type GaInNAs epilayer using magneto-luminescence spectroscopy. The band edge photoluminescence (PL) spectra at T = 7 K contain two features: the first is associated with the free exciton while the second with the conduction band to acceptor (CB → A) transition. The intensity of the latter decreases with increasing temperature while the excitonic feature survives up to T = 250 K. From the energies of the two PL features, as well as the exciton binding energy in GaInNAs, we determined the Be-acceptor binding energy to be equal to 42 meV. The energy of the CB → A feature varies linearly with magnetic field B and has a slope of 5.5×10-4 eV/T.",

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T1 - Photoluminescence study of Be-acceptors in GaInNAs epilayers

AU - Tsai, Y.

AU - Barman, B.

AU - Scrace, T.

AU - Fukuda, M.

AU - Whiteside, V. R.

AU - Sellers, I. R.

AU - Leroux, M.

AU - Khalfioui, M. Al

AU - Petrou, A.

PY - 2015/1/28

Y1 - 2015/1/28

N2 - We have studied Be-acceptors in a p-type GaInNAs epilayer using magneto-luminescence spectroscopy. The band edge photoluminescence (PL) spectra at T = 7 K contain two features: the first is associated with the free exciton while the second with the conduction band to acceptor (CB → A) transition. The intensity of the latter decreases with increasing temperature while the excitonic feature survives up to T = 250 K. From the energies of the two PL features, as well as the exciton binding energy in GaInNAs, we determined the Be-acceptor binding energy to be equal to 42 meV. The energy of the CB → A feature varies linearly with magnetic field B and has a slope of 5.5×10-4 eV/T.

AB - We have studied Be-acceptors in a p-type GaInNAs epilayer using magneto-luminescence spectroscopy. The band edge photoluminescence (PL) spectra at T = 7 K contain two features: the first is associated with the free exciton while the second with the conduction band to acceptor (CB → A) transition. The intensity of the latter decreases with increasing temperature while the excitonic feature survives up to T = 250 K. From the energies of the two PL features, as well as the exciton binding energy in GaInNAs, we determined the Be-acceptor binding energy to be equal to 42 meV. The energy of the CB → A feature varies linearly with magnetic field B and has a slope of 5.5×10-4 eV/T.

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U2 - 10.1063/1.4906409

DO - 10.1063/1.4906409

M3 - Article

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VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 045705

ER -

Photoluminescence study of Be-acceptors in GaInNAs epilayers

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