Photoluminescence properties of modulation-doped GaAs AlGaAs multiple quantum wells under high pressure

B. A. Weinstein; S. K. Hark; C. Mailhiot; C. H. Perry

doi:10.1016/0749-6036(87)90071-1

Photoluminescence properties of modulation-doped GaAs AlGaAs multiple quantum wells under high pressure

B. A. Weinstein
, S. K. Hark
, C. Mailhiot
, C. H. Perry

Physics

Xerox
Technical University of Munich

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We report the effects of hydrostatic pressure on carrier density, and on thermalization efficiency, in modulation doped GaAs AlGaAs heterostructures. The photoluminescence line shape and intensity are measured to 44 kbar at 13K. The line shape narrows dramatically with pressure until a metal-insulator transition at 9 kbar. The intensity decreases continuously after the barrier X-point and the barrier Γ-point cross at 23 kbar, indicating that activation between these two extrema significantly affects thermalization.

Original language	English
Pages (from-to)	273-275
Number of pages	3
Journal	Superlattices and Microstructures
Volume	3
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(87)90071-1
State	Published - 1987

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title = "Photoluminescence properties of modulation-doped GaAs AlGaAs multiple quantum wells under high pressure",

abstract = "We report the effects of hydrostatic pressure on carrier density, and on thermalization efficiency, in modulation doped GaAs AlGaAs heterostructures. The photoluminescence line shape and intensity are measured to 44 kbar at 13K. The line shape narrows dramatically with pressure until a metal-insulator transition at 9 kbar. The intensity decreases continuously after the barrier X-point and the barrier Γ-point cross at 23 kbar, indicating that activation between these two extrema significantly affects thermalization.",

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T1 - Photoluminescence properties of modulation-doped GaAs AlGaAs multiple quantum wells under high pressure

AU - Weinstein, B. A.

AU - Hark, S. K.

AU - Mailhiot, C.

AU - Perry, C. H.

PY - 1987

Y1 - 1987

N2 - We report the effects of hydrostatic pressure on carrier density, and on thermalization efficiency, in modulation doped GaAs AlGaAs heterostructures. The photoluminescence line shape and intensity are measured to 44 kbar at 13K. The line shape narrows dramatically with pressure until a metal-insulator transition at 9 kbar. The intensity decreases continuously after the barrier X-point and the barrier Γ-point cross at 23 kbar, indicating that activation between these two extrema significantly affects thermalization.

AB - We report the effects of hydrostatic pressure on carrier density, and on thermalization efficiency, in modulation doped GaAs AlGaAs heterostructures. The photoluminescence line shape and intensity are measured to 44 kbar at 13K. The line shape narrows dramatically with pressure until a metal-insulator transition at 9 kbar. The intensity decreases continuously after the barrier X-point and the barrier Γ-point cross at 23 kbar, indicating that activation between these two extrema significantly affects thermalization.

UR - https://www.scopus.com/pages/publications/0009324049

U2 - 10.1016/0749-6036(87)90071-1

DO - 10.1016/0749-6036(87)90071-1

M3 - Article

AN - SCOPUS:0009324049

SN - 0749-6036

VL - 3

SP - 273

EP - 275

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 3

ER -

Photoluminescence properties of modulation-doped GaAs AlGaAs multiple quantum wells under high pressure

Abstract

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