Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbands

A. Petrou; J. Warnock; J. Ralston; G. Wicks

doi:10.1016/0038-1098(86)90223-1

Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbands

A. Petrou
, J. Warnock
, J. Ralston
, G. Wicks

Physics

IBM
Cornell University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report on photoluminescence emission features which are observed from GaAs/AlGaAs multiple quantum wells only at elevated temperatures (T>10K), using weak cw laser excitation. These features have energies higher than those of the heavy and light hole excitons and are associated with interband transitions between excited confinement conduction and valence subbands. Their energies are compared with values calculated from measured well dimensions and accepted band parameters for a series of samples with well widths between 80 and 375Å.

Original language	English
Pages (from-to)	581-585
Number of pages	5
Journal	Solid State Communications
Volume	58
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(86)90223-1
State	Published - Jun 1986

Access to Document

10.1016/0038-1098(86)90223-1

Cite this

@article{cbb5e3e19a1f4b17a40937d02549bacf,

title = "Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbands",

abstract = "We report on photoluminescence emission features which are observed from GaAs/AlGaAs multiple quantum wells only at elevated temperatures (T>10K), using weak cw laser excitation. These features have energies higher than those of the heavy and light hole excitons and are associated with interband transitions between excited confinement conduction and valence subbands. Their energies are compared with values calculated from measured well dimensions and accepted band parameters for a series of samples with well widths between 80 and 375{\AA}.",

author = "A. Petrou and J. Warnock and J. Ralston and G. Wicks",

year = "1986",

month = jun,

doi = "10.1016/0038-1098(86)90223-1",

language = "English",

volume = "58",

pages = "581--585",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbands

AU - Petrou, A.

AU - Warnock, J.

AU - Ralston, J.

AU - Wicks, G.

PY - 1986/6

Y1 - 1986/6

N2 - We report on photoluminescence emission features which are observed from GaAs/AlGaAs multiple quantum wells only at elevated temperatures (T>10K), using weak cw laser excitation. These features have energies higher than those of the heavy and light hole excitons and are associated with interband transitions between excited confinement conduction and valence subbands. Their energies are compared with values calculated from measured well dimensions and accepted band parameters for a series of samples with well widths between 80 and 375Å.

AB - We report on photoluminescence emission features which are observed from GaAs/AlGaAs multiple quantum wells only at elevated temperatures (T>10K), using weak cw laser excitation. These features have energies higher than those of the heavy and light hole excitons and are associated with interband transitions between excited confinement conduction and valence subbands. Their energies are compared with values calculated from measured well dimensions and accepted band parameters for a series of samples with well widths between 80 and 375Å.

UR - https://www.scopus.com/pages/publications/0022738521

U2 - 10.1016/0038-1098(86)90223-1

DO - 10.1016/0038-1098(86)90223-1

M3 - Article

AN - SCOPUS:0022738521

SN - 0038-1098

VL - 58

SP - 581

EP - 585

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbands

Abstract

Access to Document

Other files and links

Fingerprint

Cite this