Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures

P. C. van Son; J. Cerne; M. S. Sherwin; S. J. Allen; M. Sundaram; I. H. Tan; D. Bimberg

doi:10.1016/0168-9002(94)90342-5

Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures

P. C. van Son
, J. Cerne
, M. S. Sherwin
, S. J. Allen
, M. Sundaram
, I. H. Tan
, D. Bimberg

Physics

University of California at Santa Barbara
Technical University of Berlin

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.

Original language	English
Pages (from-to)	174-177
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	341
Issue number	1-3
DOIs	https://doi.org/10.1016/0168-9002(94)90342-5
State	Published - Mar 1 1994

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van Son, P. C., Cerne, J., Sherwin, M. S., Allen, S. J., Sundaram, M., Tan, I. H., & Bimberg, D. (1994). Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 341(1-3), 174-177. https://doi.org/10.1016/0168-9002(94)90342-5

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abstract = "At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.",

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doi = "10.1016/0168-9002(94)90342-5",

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van Son, PC, Cerne, J, Sherwin, MS, Allen, SJ, Sundaram, M, Tan, IH & Bimberg, D 1994, 'Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures', Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 341, no. 1-3, pp. 174-177. https://doi.org/10.1016/0168-9002(94)90342-5

Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures. / van Son, P. C.; Cerne, J.; Sherwin, M. S. et al.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 341, No. 1-3, 01.03.1994, p. 174-177.

Research output: Contribution to journal › Article › peer-review

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AU - van Son, P. C.

AU - Cerne, J.

AU - Sherwin, M. S.

AU - Allen, S. J.

AU - Sundaram, M.

AU - Tan, I. H.

AU - Bimberg, D.

PY - 1994/3/1

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N2 - At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.

AB - At the UCSB free-electron laser we have realized a set-up to detect the photoluminescence from semiconductor quantum structures while they are irradiated with intense far-infrared radiation. The effect of the radiation on both quantum wells and quantum-well wires has been identified with non-resonant carrier heating. The confined carriers in these structures have energy-level spacings in the far-infrared region of the spectrum. The tunability of the free-electron laser therefore allows the study of resonant effects as well.

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JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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ER -

van Son PC, Cerne J, Sherwin MS, Allen SJ, Sundaram M, Tan IH et al. Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 1994 Mar 1;341(1-3):174-177. doi: 10.1016/0168-9002(94)90342-5

Photoluminescence as a probe of the interaction of intense far-infrared radiation with semiconductor quantum structures

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