Photoconductivity and recombination dynamics for a-Si:H at different thicknesses

Ya Gu James Ye; W. A. Anderson

doi:10.1016/0379-6787(88)90021-X

Photoconductivity and recombination dynamics for a-Si:H at different thicknesses

Ya Gu James Ye
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

Abstract

The photoconductivity σ_ph of amorphous silicon (a-Si:H) of various thicknesses is described as a function of temperature, wavelength and light intensity. The room temperature σ_ph is very dependent on the dark Fermi level and the sensitization is a consequence of a change in the energy band bending. Under illumination, the power dependence of σ_ph on intensity K can be divided into several regions for all thicknesses. However, there are more variations in K when light is injected. The K value covers the range of 0.2->1.0. This indicates that the slope of distribution of density of states in the gap varies considerably for the different cases. Different wavelengths of illuminating light also reveal a similar situation. The temperature dependence of σ_ph and activation energy E_a for films of various thicknesses show the same trend. Both σ_ph and E_a decrease with temperature. The rate of decrease for thin samples is less than that for thick ones. This result is analyzed and explained by means of a model.

Original language	English
Pages (from-to)	169-179
Number of pages	11
Journal	Solar Cells
Volume	25
Issue number	2
DOIs	https://doi.org/10.1016/0379-6787(88)90021-X
State	Published - Nov 1988

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@article{955247be6c9d41c185b6b866222d6575,

title = "Photoconductivity and recombination dynamics for a-Si:H at different thicknesses",

abstract = "The photoconductivity σph of amorphous silicon (a-Si:H) of various thicknesses is described as a function of temperature, wavelength and light intensity. The room temperature σph is very dependent on the dark Fermi level and the sensitization is a consequence of a change in the energy band bending. Under illumination, the power dependence of σph on intensity K can be divided into several regions for all thicknesses. However, there are more variations in K when light is injected. The K value covers the range of 0.2->1.0. This indicates that the slope of distribution of density of states in the gap varies considerably for the different cases. Different wavelengths of illuminating light also reveal a similar situation. The temperature dependence of σph and activation energy Ea for films of various thicknesses show the same trend. Both σph and Ea decrease with temperature. The rate of decrease for thin samples is less than that for thick ones. This result is analyzed and explained by means of a model.",

author = "Ye, \{Ya Gu James\} and Anderson, \{W. A.\}",

year = "1988",

month = nov,

doi = "10.1016/0379-6787(88)90021-X",

language = "English",

volume = "25",

pages = "169--179",

journal = "Solar Cells",

issn = "0379-6787",

publisher = "Elsevier B.V.",

number = "2",

}

TY - JOUR

T1 - Photoconductivity and recombination dynamics for a-Si:H at different thicknesses

AU - Ye, Ya Gu James

AU - Anderson, W. A.

PY - 1988/11

Y1 - 1988/11

N2 - The photoconductivity σph of amorphous silicon (a-Si:H) of various thicknesses is described as a function of temperature, wavelength and light intensity. The room temperature σph is very dependent on the dark Fermi level and the sensitization is a consequence of a change in the energy band bending. Under illumination, the power dependence of σph on intensity K can be divided into several regions for all thicknesses. However, there are more variations in K when light is injected. The K value covers the range of 0.2->1.0. This indicates that the slope of distribution of density of states in the gap varies considerably for the different cases. Different wavelengths of illuminating light also reveal a similar situation. The temperature dependence of σph and activation energy Ea for films of various thicknesses show the same trend. Both σph and Ea decrease with temperature. The rate of decrease for thin samples is less than that for thick ones. This result is analyzed and explained by means of a model.

AB - The photoconductivity σph of amorphous silicon (a-Si:H) of various thicknesses is described as a function of temperature, wavelength and light intensity. The room temperature σph is very dependent on the dark Fermi level and the sensitization is a consequence of a change in the energy band bending. Under illumination, the power dependence of σph on intensity K can be divided into several regions for all thicknesses. However, there are more variations in K when light is injected. The K value covers the range of 0.2->1.0. This indicates that the slope of distribution of density of states in the gap varies considerably for the different cases. Different wavelengths of illuminating light also reveal a similar situation. The temperature dependence of σph and activation energy Ea for films of various thicknesses show the same trend. Both σph and Ea decrease with temperature. The rate of decrease for thin samples is less than that for thick ones. This result is analyzed and explained by means of a model.

UR - https://www.scopus.com/pages/publications/0024104522

U2 - 10.1016/0379-6787(88)90021-X

DO - 10.1016/0379-6787(88)90021-X

M3 - Article

AN - SCOPUS:0024104522

SN - 0379-6787

VL - 25

SP - 169

EP - 179

JO - Solar Cells

JF - Solar Cells

IS - 2

ER -

Photoconductivity and recombination dynamics for a-Si:H at different thicknesses

Abstract

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