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Parallel MOSFET Module with Low Parasitic Inductance and Balanced Dynamic Current

  • Ge Yang
  • , Arindam Sircar
  • , Wei Liu
  • , Xiu Yao
  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Paralleling multiple MOSFETs is a common prac-tice to achieve high current carrying capability. This paper proposes a low-parasitic inductance parallel module design to enhance current sharing performance and low current measuring for normally-on MOSFETs. The module utilizes a laminated PCB structure to minimize parasitic inductance, thereby reducing voltage overshoot during switching and ensuring balanced cur-rent distribution between parallel devices. A symmetric layout is incorporated to achieve equal gate and source impedance, significantly improving dynamic current sharing. The LTspice simulation and experimental results from double pulse tests (DPT) confirm that the proposed design successfully reduces parasitic effects and improves current balancing, making it well-suited for high-power applications.

Original languageEnglish
Title of host publication2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798331541309
DOIs
StatePublished - 2025
Event17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025 - Philadelphia, United States
Duration: Oct 19 2025Oct 23 2025

Publication series

Name2025 IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025

Conference

Conference17th Annual IEEE Energy Conversion Conference Congress and Exposition, ECCE 2025
Country/TerritoryUnited States
CityPhiladelphia
Period10/19/2510/23/25

Keywords

  • Current balancing
  • MOS-FET
  • parallel connection

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