Oriented conductive oxide electrodes on SiO2/Si

Q. X. Jia; J. M. Roper; P. N. Arendt; S. R. Foltyn; Y. Fan; J. R. Groves

doi:10.1080/10584589808202080

Oriented conductive oxide electrodes on SiO₂/Si

Q. X. Jia
, J. M. Roper
, P. N. Arendt
, S. R. Foltyn
, Y. Fan
, J. R. Groves

Department of Materials Design and Innovation

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

Abstract

Highly conductive biaxially textured (both normal to and in the film plane) RuO₂ and La_0.5Sr_0.5CoO₃ thin films have been deposited on SiO₂/Si substrates for the first time. Yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) is used as a seed layer to induce the biaxial texture of RuO₂ and/or La_0.5Sr_0.5CoO₃ on amorphous SiO₂/Si. The degree of in-plane texture of the conductive oxide films is directly related to the texture of IBAD-YSZ. The biaxially oriented RuO₂ and La_0.5Sr_0.5CoO₃ films have a metallic resistivity vs temperature characteristic and a room-temperature resistivity of 37 μΩ-cm and 110 μΩ-cm, respectively. Ba_0.5Sr_0.5TiO₃ thin films deposited on SiO₂/Si using biaxially oriented RuO₂ and La_0.5Sr_0.5CoO₃ as bottom electrodes are (111) and (110) oriented, respectively.

Original language	English
Pages (from-to)	397-406
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	21
Issue number	1-4
DOIs	https://doi.org/10.1080/10584589808202080
State	Published - 1998

Keywords

Conductive oxides
LaSrCoO
RuO
Thin film deposition

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title = "Oriented conductive oxide electrodes on SiO2/Si",

abstract = "Highly conductive biaxially textured (both normal to and in the film plane) RuO2 and La0.5Sr0.5CoO3 thin films have been deposited on SiO2/Si substrates for the first time. Yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) is used as a seed layer to induce the biaxial texture of RuO2 and/or La0.5Sr0.5CoO3 on amorphous SiO2/Si. The degree of in-plane texture of the conductive oxide films is directly related to the texture of IBAD-YSZ. The biaxially oriented RuO2 and La0.5Sr0.5CoO3 films have a metallic resistivity vs temperature characteristic and a room-temperature resistivity of 37 μΩ-cm and 110 μΩ-cm, respectively. Ba0.5Sr0.5TiO3 thin films deposited on SiO2/Si using biaxially oriented RuO2 and La0.5Sr0.5CoO3 as bottom electrodes are (111) and (110) oriented, respectively.",

keywords = "Conductive oxides, LaSrCoO, RuO, Thin film deposition",

author = "Jia, \{Q. X.\} and Roper, \{J. M.\} and Arendt, \{P. N.\} and Foltyn, \{S. R.\} and Y. Fan and Groves, \{J. R.\}",

year = "1998",

doi = "10.1080/10584589808202080",

language = "English",

volume = "21",

pages = "397--406",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1-4",

}

TY - JOUR

T1 - Oriented conductive oxide electrodes on SiO2/Si

AU - Jia, Q. X.

AU - Roper, J. M.

AU - Arendt, P. N.

AU - Foltyn, S. R.

AU - Fan, Y.

AU - Groves, J. R.

PY - 1998

Y1 - 1998

N2 - Highly conductive biaxially textured (both normal to and in the film plane) RuO2 and La0.5Sr0.5CoO3 thin films have been deposited on SiO2/Si substrates for the first time. Yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) is used as a seed layer to induce the biaxial texture of RuO2 and/or La0.5Sr0.5CoO3 on amorphous SiO2/Si. The degree of in-plane texture of the conductive oxide films is directly related to the texture of IBAD-YSZ. The biaxially oriented RuO2 and La0.5Sr0.5CoO3 films have a metallic resistivity vs temperature characteristic and a room-temperature resistivity of 37 μΩ-cm and 110 μΩ-cm, respectively. Ba0.5Sr0.5TiO3 thin films deposited on SiO2/Si using biaxially oriented RuO2 and La0.5Sr0.5CoO3 as bottom electrodes are (111) and (110) oriented, respectively.

AB - Highly conductive biaxially textured (both normal to and in the film plane) RuO2 and La0.5Sr0.5CoO3 thin films have been deposited on SiO2/Si substrates for the first time. Yttria-stabilized zirconia (YSZ) produced by ion-beam-assisted-deposition (IBAD) is used as a seed layer to induce the biaxial texture of RuO2 and/or La0.5Sr0.5CoO3 on amorphous SiO2/Si. The degree of in-plane texture of the conductive oxide films is directly related to the texture of IBAD-YSZ. The biaxially oriented RuO2 and La0.5Sr0.5CoO3 films have a metallic resistivity vs temperature characteristic and a room-temperature resistivity of 37 μΩ-cm and 110 μΩ-cm, respectively. Ba0.5Sr0.5TiO3 thin films deposited on SiO2/Si using biaxially oriented RuO2 and La0.5Sr0.5CoO3 as bottom electrodes are (111) and (110) oriented, respectively.

KW - Conductive oxides

KW - LaSrCoO

KW - RuO

KW - Thin film deposition

UR - https://www.scopus.com/pages/publications/0032307452

U2 - 10.1080/10584589808202080

DO - 10.1080/10584589808202080

M3 - Article

AN - SCOPUS:0032307452

SN - 1058-4587

VL - 21

SP - 397

EP - 406

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1-4

ER -

Oriented conductive oxide electrodes on SiO₂/Si

Abstract

Keywords

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