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Orientation-specific amorphization and intercalated recrystallization at ion-irradiated SrTiO3/MgO interfaces

  • Jeffery A. Aguiara
  • , Mujin Zhuo
  • , Zhenxing Bi
  • , Engang Fu
  • , Yongqiang Wang
  • , Pratik P. Dholabhai
  • , Amit Misra
  • , Quanxi Jia
  • , Blas P. Uberuaga
  • Los Alamos National Laboratory Materials Science and Technology Division
  • Los Alamos National Laboratory

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Oxide composites are a class of materials with potential uses for nuclear, space, and coating applications. Exploiting their promise, however, requires a detailed understanding of their interfacial structure and chemistry. Using analytical microscopy, we have examined the radiation damage behavior at the interface of a model oxide bilayer, SrTiO3/MgO. The as-synthesized SrTiO3 thin film contained both (100) and (110) oriented domains. We found that after ion beam implantation the (110) domains amorphized at a lower radiation fluence than the (100) domains. Further, a persistent crystalline layer of SrTiO3 forms at the interface even as the rest of the SrTiO3 film amorphizes. We hypothesize that the enhanced amorphization susceptibility of the (110) domains is a consequence of how charged irradiation-induced defects at the interfaces interact with the charged planes of the (110) domains. These results demonstrate the complex relationship between interfacial structure and radiation damage evolution at oxide interfaces.

Original languageEnglish
Pages (from-to)1699-1710
Number of pages12
JournalJournal of Materials Research
Volume29
Issue number16
DOIs
StatePublished - Aug 7 2014

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