Ordering in Si1-xGex crystals

D. J. Lockwood; K. Rajan; E. W. Fenton; J. M. Baribeau; M. W. Denhoff

doi:10.1016/0038-1098(87)90492-3

Ordering in Si_1-xGe_x crystals

D. J. Lockwood
, K. Rajan
, E. W. Fenton
, J. M. Baribeau
, M. W. Denhoff

Department of Materials Design and Innovation

National Research Council of Canada

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Evidence in transmission electron microscopy and Raman scattering supports the claim by Ourmazd and Bean that the unit cell in Si_1-xGe_x grown by molecular beam epitaxy is doubled in a 〈111〉 direction by weak long-range order of Si and Ge atoms.

Original language	English
Pages (from-to)	465-467
Number of pages	3
Journal	Solid State Communications
Volume	61
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(87)90492-3
State	Published - Feb 1987

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@article{059359a1f83346678dbdb247ee5f7cf8,

title = "Ordering in Si1-xGex crystals",

abstract = "Evidence in transmission electron microscopy and Raman scattering supports the claim by Ourmazd and Bean that the unit cell in Si1-xGex grown by molecular beam epitaxy is doubled in a 〈111〉 direction by weak long-range order of Si and Ge atoms.",

author = "Lockwood, \{D. J.\} and K. Rajan and Fenton, \{E. W.\} and Baribeau, \{J. M.\} and Denhoff, \{M. W.\}",

year = "1987",

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T1 - Ordering in Si1-xGex crystals

AU - Lockwood, D. J.

AU - Rajan, K.

AU - Fenton, E. W.

AU - Baribeau, J. M.

AU - Denhoff, M. W.

PY - 1987/2

Y1 - 1987/2

N2 - Evidence in transmission electron microscopy and Raman scattering supports the claim by Ourmazd and Bean that the unit cell in Si1-xGex grown by molecular beam epitaxy is doubled in a 〈111〉 direction by weak long-range order of Si and Ge atoms.

AB - Evidence in transmission electron microscopy and Raman scattering supports the claim by Ourmazd and Bean that the unit cell in Si1-xGex grown by molecular beam epitaxy is doubled in a 〈111〉 direction by weak long-range order of Si and Ge atoms.

UR - https://www.scopus.com/pages/publications/0023290205

U2 - 10.1016/0038-1098(87)90492-3

DO - 10.1016/0038-1098(87)90492-3

M3 - Article

AN - SCOPUS:0023290205

SN - 0038-1098

VL - 61

SP - 465

EP - 467

JO - Solid State Communications

JF - Solid State Communications

IS - 8

ER -

Ordering in Si_1-xGe_x crystals

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