Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

H. Y. Liu; M. Hopkinson; C. N. Harrison; M. J. Steer; R. Frith; I. R. Sellers; D. J. Mowbray; M. S. Skolnick

doi:10.1063/1.1542914

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

H. Y. Liu
, M. Hopkinson
, C. N. Harrison
, M. J. Steer
, R. Frith
, I. R. Sellers
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield

Research output: Contribution to journal › Article › peer-review

200 Scopus citations

Abstract

The optimization of the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure was investigated. The structural and optical properties of the structures were also analyzed. It was found that optical efficiency can be improved by increasing the growth rate of the InGaAs and GaAs layers.

Original language	English
Pages (from-to)	2931-2936
Number of pages	6
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542914
State	Published - Mar 1 2003

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@article{56f4aca8896948a286faf414801216a0,

title = "Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure",

abstract = "The optimization of the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure was investigated. The structural and optical properties of the structures were also analyzed. It was found that optical efficiency can be improved by increasing the growth rate of the InGaAs and GaAs layers.",

author = "Liu, \{H. Y.\} and M. Hopkinson and Harrison, \{C. N.\} and Steer, \{M. J.\} and R. Frith and Sellers, \{I. R.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2003",

month = mar,

day = "1",

doi = "10.1063/1.1542914",

language = "English",

volume = "93",

pages = "2931--2936",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

AU - Liu, H. Y.

AU - Hopkinson, M.

AU - Harrison, C. N.

AU - Steer, M. J.

AU - Frith, R.

AU - Sellers, I. R.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - The optimization of the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure was investigated. The structural and optical properties of the structures were also analyzed. It was found that optical efficiency can be improved by increasing the growth rate of the InGaAs and GaAs layers.

AB - The optimization of the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure was investigated. The structural and optical properties of the structures were also analyzed. It was found that optical efficiency can be improved by increasing the growth rate of the InGaAs and GaAs layers.

UR - https://www.scopus.com/pages/publications/0037348036

U2 - 10.1063/1.1542914

DO - 10.1063/1.1542914

M3 - Article

AN - SCOPUS:0037348036

SN - 0021-8979

VL - 93

SP - 2931

EP - 2936

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

Abstract

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