Abstract
A new type of grading, namely, parabolic grading, for the purpose of improving ohmic contacts to p‐type ZnSe is presented. The valence band profiles as well as the critical grading length for a 1kT barrier are calculated for a parabolically graded Zn(Se, Te) structure. Comparison of our results with those of linearly graded structures shows the clear advantage of parabolic grading.
| Original language | English |
|---|---|
| Pages (from-to) | 435-438 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B): Basic Research |
| Volume | 187 |
| Issue number | 2 |
| DOIs | |
| State | Published - Feb 1 1995 |
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