@inproceedings{27631da1e4e14b8e8ea0b1a90ddb869b,
title = "Optimal Accelerated Test Regions for Time- Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology",
abstract = "This paper proposes a methodology to find optimal accelerated test regions for lifetime parameter estimation for not only the traditional reliability concern, frontend-of-line dielectric breakdown (FEOL TDDB), but also the newly emerging wearout mechanism, middle-of-line time dependent dielectric breakdown (MOL TDDB) in 14nm FinFET technology. The framework to find the optimal test regions is introduced; the error estimating methodology is discussed in detail. Three digital circuits are presented for evaluation and comparison. The optimal test regions depend on the circuit size as well as the types of standard cells in the circuits. To ensure accurate lifetime parameter estimation, both error from sampling and error from selectivity should be considered at the same time. As a general guideline, higher estimation accuracy will be achieved by testing gate TDDB lifetime parameters at higher voltages, while testing middle-of-line TDDB at higher temperatures.",
keywords = "digital circuit, FinFET, frontend-of-line dielectric breakdown, lifetime, middle-of-line breakdown, reliability, time-dependent dielectric breakdown, wearout",
author = "Kexin Yang and Rui Zhang and Taizhi Liu and Kim, \{Dae Hyun\} and Linda Milor",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 33rd Conference on Design of Circuits and Integrated Systems, DCIS 2018 ; Conference date: 14-11-2018 Through 16-11-2018",
year = "2019",
month = apr,
day = "3",
doi = "10.1109/DCIS.2018.8681497",
language = "English",
series = "Proceedings - 33rd Conference on Design of Circuits and Integrated Systems, DCIS 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Proceedings - 33rd Conference on Design of Circuits and Integrated Systems, DCIS 2018",
address = "United States",
}