Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

T. Schmiedel; L. P. Fu; S. T. Lee; W. Y. Yu; A. Petrou; M. Dutta; J. Pamulapati; P. G. Newman; J. Boviatsis

doi:10.1063/1.354730

Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

T. Schmiedel
, L. P. Fu
, S. T. Lee
, W. Y. Yu
, A. Petrou
, M. Dutta
, J. Pamulapati
, P. G. Newman
, J. Boviatsis

Physics

SUNY Buffalo
U.S. Army Research Laboratory
Technological Institute of Chalkis

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e ₁→e₂ intersubband transition.

Original language	English
Pages (from-to)	2100-2102
Number of pages	3
Journal	Journal of Applied Physics
Volume	74
Issue number	3
DOIs	https://doi.org/10.1063/1.354730
State	Published - 1993

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title = "Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure",

abstract = "We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e 1→e2 intersubband transition.",

author = "T. Schmiedel and Fu, \{L. P.\} and Lee, \{S. T.\} and Yu, \{W. Y.\} and A. Petrou and M. Dutta and J. Pamulapati and Newman, \{P. G.\} and J. Boviatsis",

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doi = "10.1063/1.354730",

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T1 - Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

AU - Schmiedel, T.

AU - Fu, L. P.

AU - Lee, S. T.

AU - Yu, W. Y.

AU - Petrou, A.

AU - Dutta, M.

AU - Pamulapati, J.

AU - Newman, P. G.

AU - Boviatsis, J.

PY - 1993

Y1 - 1993

N2 - We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e 1→e2 intersubband transition.

AB - We present an optical study (photoluminescence and Raman scattering) of a GaAs/AlAs multiple quantum well structure doped n-type in the AlAs barriers. The photoluminescence shows that the Si donors of the barriers release their electrons in the GaAs wells, creating a dense quasi-two-dimensional electron gas. The Raman spectra contain a feature associated with the e 1→e2 intersubband transition.

UR - https://www.scopus.com/pages/publications/0027640044

U2 - 10.1063/1.354730

DO - 10.1063/1.354730

M3 - Article

AN - SCOPUS:0027640044

SN - 0021-8979

VL - 74

SP - 2100

EP - 2102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Optical study of an n-type modulation-doped GaAs/AlAs multiple quantum well structure

Abstract

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