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Optical phonons in GaN/AlN quantum dots: Leaky modes

  • Wayne State University
  • United States Army Research Office

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Surface polar vibrations of a GaN quantum dot in AlN matrix are analyzed in the framework of the macroscopic dielectric continuum model. The conditions are found for existence of surface modes on a quantum dot of oblate spheroidal form. These conditions determine continuum frequency regions rather than quantized frequencies. The found modes are peculiar leaky states. They can provide effective energy relaxation of the confined electrons.

Original languageEnglish
Pages (from-to)359-361
Number of pages3
JournalPhysica B: Condensed Matter
Volume316-317
DOIs
StatePublished - May 2002

Keywords

  • GaN/AlN
  • Leaky states
  • Optical phonons
  • Quantum dots

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