Abstract
Optical orientation is a highly efficient tool for the generation of nonequilibrium spin polarization in semiconductors. Combined with spin-polarized transport it offers new functionalities for conventional electronic devices, such as pn junction bipolar diodes or transistors. In nominally nonmagnetic junctions optical orientation can provide a source for spin capacitance - the bias-dependent nonequilibrium spin accumulation - or for spin-polarized current in bipolar spin-polarized solar cells. In magnetic junctions, the nonequilibrium spin polarization generated by spin orientation in the proximity of an equilibrium magnetization gives rise to the spin-voltaic effect (a realization of the Silsbee-Johnson coupling), enabling efficient control of electrical properties such as the I-V characteristics of the junctions by magnetic and optical fields. This paper reviews the main results of investigations of spin-polarized and magnetic pn junctions, from spin capacitance to the spin-voltaic effect.
| Original language | English |
|---|---|
| Article number | 114005 |
| Journal | Semiconductor Science and Technology |
| Volume | 23 |
| Issue number | 11 |
| DOIs | |
| State | Published - 2008 |
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