Optical Aharonov-Bohm effect in type-II quantum Dots

I. R. Sellers; I. L. Kuskovsky; A. O. Govorov; B. D. McCombe

doi:10.1007/978-3-642-39197-2_11

Optical Aharonov-Bohm effect in type-II quantum Dots

I. R. Sellers
, I. L. Kuskovsky
, A. O. Govorov
, B. D. McCombe

City University of New York
Ohio University

Research output: Contribution to journal › Article › peer-review

Abstract

The chapter describes the principles of and reviews recent progress on the Optical Aharonov-Bohm effect in quantum dots focusing on type-II quantum dot structures. Type-II quantum dots have been predicted to display the Optical Aharonov-Bohm effect (OABE) due to the strong polarization of an exciton that results from the spatial separation of the electrons and holes in such systems. The Aharonov-Bohm effect for type-II II–VI Zn(Mn)Te/ZnSe quantum dots is the principal topic of this chapter, with additional discussion of InGaAs/GaAs, InP/GaAs and GeSi type-II quantum dots, in which these effects have also been observed.

Original language	English
Pages (from-to)	267-297
Number of pages	31
Journal	NanoScience and Technology
Volume	87
DOIs	https://doi.org/10.1007/978-3-642-39197-2_11
State	Published - 2014

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title = "Optical Aharonov-Bohm effect in type-II quantum Dots",

abstract = "The chapter describes the principles of and reviews recent progress on the Optical Aharonov-Bohm effect in quantum dots focusing on type-II quantum dot structures. Type-II quantum dots have been predicted to display the Optical Aharonov-Bohm effect (OABE) due to the strong polarization of an exciton that results from the spatial separation of the electrons and holes in such systems. The Aharonov-Bohm effect for type-II II–VI Zn(Mn)Te/ZnSe quantum dots is the principal topic of this chapter, with additional discussion of InGaAs/GaAs, InP/GaAs and GeSi type-II quantum dots, in which these effects have also been observed.",

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doi = "10.1007/978-3-642-39197-2\_11",

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AU - Sellers, I. R.

AU - Kuskovsky, I. L.

AU - Govorov, A. O.

AU - McCombe, B. D.

N1 - Publisher Copyright: © Springer-Verlag Berlin Heidelberg 2014.

PY - 2014

Y1 - 2014

N2 - The chapter describes the principles of and reviews recent progress on the Optical Aharonov-Bohm effect in quantum dots focusing on type-II quantum dot structures. Type-II quantum dots have been predicted to display the Optical Aharonov-Bohm effect (OABE) due to the strong polarization of an exciton that results from the spatial separation of the electrons and holes in such systems. The Aharonov-Bohm effect for type-II II–VI Zn(Mn)Te/ZnSe quantum dots is the principal topic of this chapter, with additional discussion of InGaAs/GaAs, InP/GaAs and GeSi type-II quantum dots, in which these effects have also been observed.

AB - The chapter describes the principles of and reviews recent progress on the Optical Aharonov-Bohm effect in quantum dots focusing on type-II quantum dot structures. Type-II quantum dots have been predicted to display the Optical Aharonov-Bohm effect (OABE) due to the strong polarization of an exciton that results from the spatial separation of the electrons and holes in such systems. The Aharonov-Bohm effect for type-II II–VI Zn(Mn)Te/ZnSe quantum dots is the principal topic of this chapter, with additional discussion of InGaAs/GaAs, InP/GaAs and GeSi type-II quantum dots, in which these effects have also been observed.

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DO - 10.1007/978-3-642-39197-2_11

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AN - SCOPUS:84921677869

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VL - 87

SP - 267

EP - 297

JO - NanoScience and Technology

JF - NanoScience and Technology

ER -

Optical Aharonov-Bohm effect in type-II quantum Dots

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