On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

Hongyi Mi; Hao Chih Yuan; Jung Hun Seo; Orlando H. Auciello; Derrick C. Mancini; Robert W. Carpick; Sergio P. Pacheco; Anirudha V. Sumant; Zhenqiang Ma

doi:10.1063/1.4979480

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

Hongyi Mi
, Hao Chih Yuan
, Jung Hun Seo
, Orlando H. Auciello
, Derrick C. Mancini
, Robert W. Carpick
, Sergio P. Pacheco
, Anirudha V. Sumant
, Zhenqiang Ma

Department of Materials Design and Innovation

University of Wisconsin-Madison
Argonne National Laboratory
University of Texas at Dallas
Freescale Semiconductor

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage V_th, transconductance g_m, cut-off frequency f_T and maximum oscillation frequency f_max. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

Original language	English
Article number	035121
Journal	AIP Advances
Volume	7
Issue number	3
DOIs	https://doi.org/10.1063/1.4979480
State	Published - Mar 1 2017

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title = "On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip",

abstract = "A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.",

author = "Hongyi Mi and Yuan, \{Hao Chih\} and Seo, \{Jung Hun\} and Auciello, \{Orlando H.\} and Mancini, \{Derrick C.\} and Carpick, \{Robert W.\} and Pacheco, \{Sergio P.\} and Sumant, \{Anirudha V.\} and Zhenqiang Ma",

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doi = "10.1063/1.4979480",

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T1 - On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

AU - Mi, Hongyi

AU - Yuan, Hao Chih

AU - Seo, Jung Hun

AU - Auciello, Orlando H.

AU - Mancini, Derrick C.

AU - Carpick, Robert W.

AU - Pacheco, Sergio P.

AU - Sumant, Anirudha V.

AU - Ma, Zhenqiang

PY - 2017/3/1

Y1 - 2017/3/1

N2 - A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

AB - A low temperature deposition of high quality ultrananocrystalline diamond (UNCD) film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

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ER -

On the integration of ultrananocrystalline diamond (UNCD) with CMOS chip

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