On possible use of capped quantum dots in memory devices

Here we report on the analysis of a possible use of semiconductor quantum dots (QDs) in memory storage devices. We analyze the charging and discharging behavior of capped CdSe QDs deposited on graphite in ambient conditions. Individual QDs can be addressed (charged) with the synergistic action of light and mechanical interaction with a probe of an atomic force microscope (AFM). The analyzed QDs allow recording information at a density up to 1 Tb/cm ². We demonstrate that it is possible to attain the charging time (writing) down to 10 ns while keeping discharging (storage) for more than 1000 years.