Occupancy of shallow donor impurities in quasi-two-dimensional systems: D0 and D- states

S. Holmes; J. P. Cheng; B. D. McCombe; W. Schaff

doi:10.1103/PhysRevLett.69.2571

Occupancy of shallow donor impurities in quasi-two-dimensional systems: D0 and D- states

S. Holmes
, J. P. Cheng
, B. D. McCombe
, W. Schaff

Physics

SUNY Buffalo
Cornell University

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

Far-infrared magnetotransmission and photoconductivity measurements combined with visible-light, photon-dose experiments on wide-barrier GaAs/Al0.3Ga0.7 As multiple-quantum-well samples planar doped with Si donors in both well and barrier centers have provided unambiguous evidence for the existence of D- ion states and the evolution of the occupancy of the donor-ion electronic states in the quantum wells with excess electrons in this quasi-2D system.

Original language	English
Pages (from-to)	2571-2574
Number of pages	4
Journal	Physical Review Letters
Volume	69
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.69.2571
State	Published - 1992

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title = "Occupancy of shallow donor impurities in quasi-two-dimensional systems: D0 and D- states",

abstract = "Far-infrared magnetotransmission and photoconductivity measurements combined with visible-light, photon-dose experiments on wide-barrier GaAs/Al0.3Ga0.7 As multiple-quantum-well samples planar doped with Si donors in both well and barrier centers have provided unambiguous evidence for the existence of D- ion states and the evolution of the occupancy of the donor-ion electronic states in the quantum wells with excess electrons in this quasi-2D system.",

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year = "1992",

doi = "10.1103/PhysRevLett.69.2571",

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AU - Holmes, S.

AU - Cheng, J. P.

AU - McCombe, B. D.

AU - Schaff, W.

PY - 1992

Y1 - 1992

N2 - Far-infrared magnetotransmission and photoconductivity measurements combined with visible-light, photon-dose experiments on wide-barrier GaAs/Al0.3Ga0.7 As multiple-quantum-well samples planar doped with Si donors in both well and barrier centers have provided unambiguous evidence for the existence of D- ion states and the evolution of the occupancy of the donor-ion electronic states in the quantum wells with excess electrons in this quasi-2D system.

AB - Far-infrared magnetotransmission and photoconductivity measurements combined with visible-light, photon-dose experiments on wide-barrier GaAs/Al0.3Ga0.7 As multiple-quantum-well samples planar doped with Si donors in both well and barrier centers have provided unambiguous evidence for the existence of D- ion states and the evolution of the occupancy of the donor-ion electronic states in the quantum wells with excess electrons in this quasi-2D system.

UR - https://www.scopus.com/pages/publications/0000901037

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DO - 10.1103/PhysRevLett.69.2571

M3 - Article

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JO - Physical Review Letters

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ER -

Occupancy of shallow donor impurities in quasi-two-dimensional systems: D0 and D- states

Abstract

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