Abstract
An experimental set-up for the observation of transient spectra and mode partition noise of InGaAsP injection lasers in real time is described. The build-up times for the dominant mode in various lasers are compared.
| Original language | English |
|---|---|
| Pages (from-to) | 904-905 |
| Number of pages | 2 |
| Journal | Electronics Letters |
| Volume | 18 |
| Issue number | 21 |
| DOIs | |
| State | Published - Oct 14 1982 |
Keywords
- Semiconductor devices and materials
- Semiconductor lasers
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