Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO3 insulator

C. Kwon; Q. X. Jia; Y. Fan; M. F. Hundley; D. W. Reagor; M. E. Hawley; D. E. Peterson

doi:10.1557/proc-494-237

Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO₃ insulator

C. Kwon
, Q. X. Jia
, Y. Fan
, M. F. Hundley
, D. W. Reagor
, M. E. Hawley
, D. E. Peterson

Department of Materials Design and Innovation

Los Alamos National Laboratory

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La_0.7Sr_0.3)MnO₃ ferromagnetic electrodes and a SrTiO₃ insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T<100 K).

Original language	English
Pages (from-to)	237-242
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	494
DOIs	https://doi.org/10.1557/proc-494-237
State	Published - 1997
Event	Proceedings of the 1997 Fall MRS Symposium - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

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@article{040f90ec8d024f98bc048e34889d61d0,

title = "Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO3 insulator",

abstract = "We report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30\% is observed below 300 Oe at low temperatures (T<100 K).",

author = "C. Kwon and Jia, \{Q. X.\} and Y. Fan and Hundley, \{M. F.\} and Reagor, \{D. W.\} and Hawley, \{M. E.\} and Peterson, \{D. E.\}",

year = "1997",

doi = "10.1557/proc-494-237",

language = "English",

volume = "494",

pages = "237--242",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 Fall MRS Symposium ; Conference date: 01-12-1997 Through 04-12-1997",

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TY - JOUR

T1 - Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO3 insulator

AU - Kwon, C.

AU - Jia, Q. X.

AU - Fan, Y.

AU - Hundley, M. F.

AU - Reagor, D. W.

AU - Hawley, M. E.

AU - Peterson, D. E.

PY - 1997

Y1 - 1997

N2 - We report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T<100 K).

AB - We report the fabrication of ferromagnet-insulator-ferromagnet junction devices using a ramp-edge geometry based on (La0.7Sr0.3)MnO3 ferromagnetic electrodes and a SrTiO3 insulator. The multilayer thin films were deposited using pulsed laser deposition and the devices were patterned using photolithography and ion milling. As expected from the spin-dependent tunneling, the junction magnetoresistance depends on the relative orientation of the magnetization in the electrodes. The maximum junction magnetoresistance (JMR) of 30% is observed below 300 Oe at low temperatures (T<100 K).

UR - https://www.scopus.com/pages/publications/0031387541

U2 - 10.1557/proc-494-237

DO - 10.1557/proc-494-237

M3 - Conference article

AN - SCOPUS:0031387541

SN - 0272-9172

VL - 494

SP - 237

EP - 242

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 Fall MRS Symposium

Y2 - 1 December 1997 through 4 December 1997

ER -

Observation of large low field magnetoresistance in ramp-edge tunneling junctions based on doped manganite ferromagnetic electrodes and a SrTiO₃ insulator

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