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Observation of interband transitions associated with x-valley landau levels in gaas/alas quantum-well structures

  • SUNY Buffalo
  • United States Army Research Office
  • U.S. Army Research Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report on a magnetophotoluminescence study of an n-type modulation doped (Formula presented) quantum-well structure in which a dense electron gas populates the AlAs X valleys. The interband transitions in this system are type II and exhibit GaAs and AlAs LO-phonon replicas. In the presence of a magnetic field applied perpendicular to the structure’s layers luminescence features associated with the l=0 and l=1 Landau levels of the AlAs (Formula presented) valleys were resolved. The slope (Formula presented) of these transitions yield an in-plane effective mass (Formula presented) of 0.44.

Original languageEnglish
Pages (from-to)7546-7550
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume59
Issue number11
DOIs
StatePublished - 1999

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