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Observation of electronic states confined in surface quantum wells and above quantum barriers with modulated reflectivity

  • C. Parks
  • , A. K. Ramdas
  • , M. R. Melloch
  • , G. Steblovsky
  • , L. R. Ram-Mohan
  • , H. Luo
  • Purdue University
  • Worcester Polytechnic Institute

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

The modulated reflectivity spectra of a surface quantum well, composed of vacuum- /GaAs/AlxGa1-xAs, exhibit in a striking manner optical transitions associated with electronic states confined within the quantum well. The spectra reveal numerous distinct signatures of the transitions between quantum confined states in the GaAs surface layer, their energies demonstrably controlled by its width. Equally remarkable signatures appear, which can be traced to localized electronic levels above the AlxGa1-xAs single quantum barrier formed by this structure.

Original languageEnglish
Pages (from-to)563-567
Number of pages5
JournalSolid State Communications
Volume92
Issue number7
DOIs
StatePublished - Nov 1994

Keywords

  • A. semiconductors
  • D. quantum localization E. light absorption and reflection

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