Abstract
The modulated reflectivity spectra of a surface quantum well, composed of vacuum- /GaAs/AlxGa1-xAs, exhibit in a striking manner optical transitions associated with electronic states confined within the quantum well. The spectra reveal numerous distinct signatures of the transitions between quantum confined states in the GaAs surface layer, their energies demonstrably controlled by its width. Equally remarkable signatures appear, which can be traced to localized electronic levels above the AlxGa1-xAs single quantum barrier formed by this structure.
| Original language | English |
|---|---|
| Pages (from-to) | 563-567 |
| Number of pages | 5 |
| Journal | Solid State Communications |
| Volume | 92 |
| Issue number | 7 |
| DOIs | |
| State | Published - Nov 1994 |
Keywords
- A. semiconductors
- D. quantum localization E. light absorption and reflection
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