TY - GEN
T1 - Numerical simulation of plasma waves in high-electron-mobility transistors using kinetic transport model
AU - Satou, Akira
AU - Ryzhii, Victor
AU - Vagidov, Nizami
AU - Mitin, Vladimir
PY - 2009
Y1 - 2009
N2 - We study plasma waves in a high-electron-mobility transistor (HEMT) structure by numerical simulation using the kinetic electron transport model. We find that the plasma waves in the gated section of the channel can damp even without the electron collisions with impurities and phonons. The damping is related to the thermal spread of the electron velocity. We also show that the ungated sections of the channel play an important role in determining the plasma frequency and the damping rate because the plasma waves spread over the entire channel.
AB - We study plasma waves in a high-electron-mobility transistor (HEMT) structure by numerical simulation using the kinetic electron transport model. We find that the plasma waves in the gated section of the channel can damp even without the electron collisions with impurities and phonons. The damping is related to the thermal spread of the electron velocity. We also show that the ungated sections of the channel play an important role in determining the plasma frequency and the damping rate because the plasma waves spread over the entire channel.
UR - https://www.scopus.com/pages/publications/70350234812
U2 - 10.1109/IWCE.2009.5091133
DO - 10.1109/IWCE.2009.5091133
M3 - Conference contribution
AN - SCOPUS:70350234812
SN - 9781424439270
T3 - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
BT - Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
T2 - 2009 13th International Workshop on Computational Electronics, IWCE 2009
Y2 - 27 May 2009 through 29 May 2009
ER -