Numerical simulation of an optoelectronic thyristor in the regime of incomplete turn-off

Direct two-dimensional simulations are used to analyse the possibility of controlling the carrier concentration in the gated base of a GaAs optoelectronic thyristor, which operates in the regime of incomplete turn-off. Modelling results indicate that the number of carriers, light intensity, current distribution, and the position of the light-emitting region the gated base of the thyristor can effectively be changed using gate currents, insufficient to turn the device completely off. The utilization of incomplete turn-off principle can be used for light-intensity modulation and switching purposes.