Abstract
A study of the damage effects of 1. 0 MeV and 1. 6 MeV protons (nonionizing) and 1. 0 MeV electrons on Cr-single crystal, p-MISi solar cells has been conducted. Pertinent photovoltaic parameters (V//o//c, J//s//c, minority carrier diffusion length, spectral response) have been obtained. Critical damage fluences have been determined for each type and energy of investigated radiation. The important interface state considerations are addressed by measurement of the pre- and post radiation interface state profiles and magnitudes. The influence of diffusion length degradation on short circuit current and interface state increase/short circuit current decrease on open circuit voltage is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 863-869 |
| Number of pages | 7 |
| Journal | Conference Record of the IEEE Photovoltaic Specialists Conference |
| State | Published - 1980 |
| Event | Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA Duration: Jan 7 1980 → Jan 10 1980 |
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