Novel FET structures based on bundled C60 nanowhiskers

Kenichi Ogawa; Asato Ikegami; Hajime Tsuji; Tomohiro Kato; Nobuyuki Aoki; Jonathan P. Bird; Yuichi Ochiai

doi:10.1063/1.2729918

Novel FET structures based on bundled C₆₀ nanowhiskers

Kenichi Ogawa
, Asato Ikegami
, Hajime Tsuji
, Tomohiro Kato
, Nobuyuki Aoki
, Jonathan P. Bird
, Yuichi Ochiai

Department of Electrical Engineering

Chiba University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

We report on the electrical properties of Field-Effect Transistors (FETs) based on C₆₀ nano-whiskers (C₆₀ NWs). The C₆₀ NWs-FETs exhibits n-channel, normally-on, properties and the carrier mobility is estimated to be almost 2 × 10^-2 cm²/Vs under vacuum conditions at room temperature. We also report on C₆₀ NWs-FET characteristics with low work-function source and drain (Mg) electrodes. The carrier mobility of Mg-electrode device is slightly higher than that of the Au-electrode one.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages	365-366
Number of pages	2
DOIs	https://doi.org/10.1063/1.2729918
State	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria Duration: Jul 24 2006 → Jul 28 2006

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/Territory	Austria
City	Vienna
Period	07/24/06 → 07/28/06

Keywords

Field-effect transistor
Fullerene
Whisker

Access to Document

10.1063/1.2729918

Cite this

@inproceedings{0a259518e9c541b4ad9b904b1e0889e7,

title = "Novel FET structures based on bundled C60 nanowhiskers",

abstract = "We report on the electrical properties of Field-Effect Transistors (FETs) based on C60 nano-whiskers (C60 NWs). The C60 NWs-FETs exhibits n-channel, normally-on, properties and the carrier mobility is estimated to be almost 2 × 10-2 cm2/Vs under vacuum conditions at room temperature. We also report on C60 NWs-FET characteristics with low work-function source and drain (Mg) electrodes. The carrier mobility of Mg-electrode device is slightly higher than that of the Au-electrode one.",

keywords = "Field-effect transistor, Fullerene, Whisker",

author = "Kenichi Ogawa and Asato Ikegami and Hajime Tsuji and Tomohiro Kato and Nobuyuki Aoki and Bird, \{Jonathan P.\} and Yuichi Ochiai",

year = "2007",

doi = "10.1063/1.2729918",

language = "English",

isbn = "9780735403970",

series = "AIP Conference Proceedings",

pages = "365--366",

booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

}

Ogawa, K, Ikegami, A, Tsuji, H, Kato, T, Aoki, N, Bird, JP & Ochiai, Y 2007, Novel FET structures based on bundled C₆₀ nanowhiskers. in Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. AIP Conference Proceedings, vol. 893, pp. 365-366, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, Austria, 07/24/06. https://doi.org/10.1063/1.2729918

Novel FET structures based on bundled C₆₀ nanowhiskers. / Ogawa, Kenichi; Ikegami, Asato; Tsuji, Hajime et al.
Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. 2007. p. 365-366 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Novel FET structures based on bundled C60 nanowhiskers

AU - Ogawa, Kenichi

AU - Ikegami, Asato

AU - Tsuji, Hajime

AU - Kato, Tomohiro

AU - Aoki, Nobuyuki

AU - Bird, Jonathan P.

AU - Ochiai, Yuichi

PY - 2007

Y1 - 2007

N2 - We report on the electrical properties of Field-Effect Transistors (FETs) based on C60 nano-whiskers (C60 NWs). The C60 NWs-FETs exhibits n-channel, normally-on, properties and the carrier mobility is estimated to be almost 2 × 10-2 cm2/Vs under vacuum conditions at room temperature. We also report on C60 NWs-FET characteristics with low work-function source and drain (Mg) electrodes. The carrier mobility of Mg-electrode device is slightly higher than that of the Au-electrode one.

AB - We report on the electrical properties of Field-Effect Transistors (FETs) based on C60 nano-whiskers (C60 NWs). The C60 NWs-FETs exhibits n-channel, normally-on, properties and the carrier mobility is estimated to be almost 2 × 10-2 cm2/Vs under vacuum conditions at room temperature. We also report on C60 NWs-FET characteristics with low work-function source and drain (Mg) electrodes. The carrier mobility of Mg-electrode device is slightly higher than that of the Au-electrode one.

KW - Field-effect transistor

KW - Fullerene

KW - Whisker

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DO - 10.1063/1.2729918

M3 - Conference contribution

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BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

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