Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor

J. U. Bae; T. Y. Lin; J. L. Reno; J. P. Bird

doi:10.1063/1.2987735

Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor

J. U. Bae
, T. Y. Lin
, J. L. Reno
, J. P. Bird

Department of Electrical Engineering

SUNY Buffalo
Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We analyze the influence of applied source-drain bias (V_sd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of V_sd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.

Original language	English
Article number	143109
Journal	Applied Physics Letters
Volume	93
Issue number	14
DOIs	https://doi.org/10.1063/1.2987735
State	Published - 2008

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title = "Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor",

abstract = "We analyze the influence of applied source-drain bias (Vsd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of Vsd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.",

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AU - Bae, J. U.

AU - Lin, T. Y.

AU - Reno, J. L.

AU - Bird, J. P.

PY - 2008

Y1 - 2008

N2 - We analyze the influence of applied source-drain bias (Vsd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of Vsd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.

AB - We analyze the influence of applied source-drain bias (Vsd) on the magnetoresistance (MR) of a field-effect transistor (FET) whose gate is formed by a nanoscale magnet. Using an external magnetic field to modulate the fringing magnetic fields that emanate into the channel of the hybrid FET from its gate, we observe a strongly hysteretic MR that is suppressed by the application of Vsd. Our analysis suggests that the effect of Vsd is to reduce the effective barrier in the channel and that the tunneling/activated MR is quenched due to the associated increase in carrier transmission.

UR - https://www.scopus.com/pages/publications/53649104672

U2 - 10.1063/1.2987735

DO - 10.1063/1.2987735

M3 - Article

AN - SCOPUS:53649104672

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143109

ER -

Nonlinear characteristics of the hysteretic magnetoresistance of a hybrid nanomagnetic field-effect transistor

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