Noise and impedance of n+-n-n+ InP microwave generators

V. Gruzinskis; V. Mitin; E. Starikov; P. Shiktorov

doi:10.1063/1.356524

Noise and impedance of n⁺-n-n⁺ InP microwave generators

V. Gruzinskis
, V. Mitin
, E. Starikov
, P. Shiktorov

Department of Electrical Engineering

Wayne State University
Center for Physical Sciences and Technology

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The noise power spectral density P_n in a submicron InP diode loaded by resistor R is calculated using the Monte Carlo particle technique. It is shown that at biases above the generation threshold the P_n has a peak at the frequency f_peak which corresponds to the highest generation frequency at the given R. The excess noise is the shot noise of electrons accumulated into the layers. Measuring the frequency of the peak f_peak as the function of R one can obtain the negative values of the real part of impedance at the high-frequency side of the negative impedance spectrum.

Original language	English
Pages (from-to)	8210-8212
Number of pages	3
Journal	Journal of Applied Physics
Volume	75
Issue number	12
DOIs	https://doi.org/10.1063/1.356524
State	Published - 1994

Access to Document

10.1063/1.356524

Cite this

@article{e1e32c57ef1a4ac2a39f3e722e0ba827,

title = "Noise and impedance of n+-n-n+ InP microwave generators",

abstract = "The noise power spectral density Pn in a submicron InP diode loaded by resistor R is calculated using the Monte Carlo particle technique. It is shown that at biases above the generation threshold the Pn has a peak at the frequency fpeak which corresponds to the highest generation frequency at the given R. The excess noise is the shot noise of electrons accumulated into the layers. Measuring the frequency of the peak fpeak as the function of R one can obtain the negative values of the real part of impedance at the high-frequency side of the negative impedance spectrum.",

author = "V. Gruzinskis and V. Mitin and E. Starikov and P. Shiktorov",

year = "1994",

doi = "10.1063/1.356524",

language = "English",

volume = "75",

pages = "8210--8212",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Noise and impedance of n+-n-n+ InP microwave generators

AU - Gruzinskis, V.

AU - Mitin, V.

AU - Starikov, E.

AU - Shiktorov, P.

PY - 1994

Y1 - 1994

N2 - The noise power spectral density Pn in a submicron InP diode loaded by resistor R is calculated using the Monte Carlo particle technique. It is shown that at biases above the generation threshold the Pn has a peak at the frequency fpeak which corresponds to the highest generation frequency at the given R. The excess noise is the shot noise of electrons accumulated into the layers. Measuring the frequency of the peak fpeak as the function of R one can obtain the negative values of the real part of impedance at the high-frequency side of the negative impedance spectrum.

AB - The noise power spectral density Pn in a submicron InP diode loaded by resistor R is calculated using the Monte Carlo particle technique. It is shown that at biases above the generation threshold the Pn has a peak at the frequency fpeak which corresponds to the highest generation frequency at the given R. The excess noise is the shot noise of electrons accumulated into the layers. Measuring the frequency of the peak fpeak as the function of R one can obtain the negative values of the real part of impedance at the high-frequency side of the negative impedance spectrum.

UR - https://www.scopus.com/pages/publications/0346928768

U2 - 10.1063/1.356524

DO - 10.1063/1.356524

M3 - Article

AN - SCOPUS:0346928768

SN - 0021-8979

VL - 75

SP - 8210

EP - 8212

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -

Noise and impedance of n⁺-n-n⁺ InP microwave generators

Abstract

Access to Document

Other files and links

Fingerprint

Cite this