TY - GEN
T1 - NiSi nanowires and nanobridges formed by metal-induced growth
AU - Joondong, Kim
AU - Dongho, Lee
AU - Anderson, Wayne A.
PY - 2005
Y1 - 2005
N2 - Nickel monosilicide (NiSi) nanowires (NWs) were fabricated by metal-induced growth at 575°C. The solid-state reaction of Ni and Si provides linear grown NWs. The parallel grown NW forms a nanobridge (NB) across a trench, patterned with a simple optical lithography and metal lift-off method. The Ni pads gave a good Ohmic contact without affecting the I-V transport characteristics through a NB. The metallic NB, 2.73 μm in length and 50 nm in diameter, gave a low resistance of 148 Ω. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of 'self and direct' assembled 'bottom-up' fabrication concepts.
AB - Nickel monosilicide (NiSi) nanowires (NWs) were fabricated by metal-induced growth at 575°C. The solid-state reaction of Ni and Si provides linear grown NWs. The parallel grown NW forms a nanobridge (NB) across a trench, patterned with a simple optical lithography and metal lift-off method. The Ni pads gave a good Ohmic contact without affecting the I-V transport characteristics through a NB. The metallic NB, 2.73 μm in length and 50 nm in diameter, gave a low resistance of 148 Ω. The self-assembled nanobridge can be applied to form nanocontacts at relatively low temperatures. The MIG NB is a promising 1 dimensional nanoscale building block to satisfy the need of 'self and direct' assembled 'bottom-up' fabrication concepts.
UR - https://www.scopus.com/pages/publications/34249945378
M3 - Conference contribution
AN - SCOPUS:34249945378
SN - 1558998551
SN - 9781558998551
T3 - Materials Research Society Symposium Proceedings
SP - 309
EP - 317
BT - Assembly at the Nanoscale
T2 - 2005 MRS Fall Meeting
Y2 - 28 November 2005 through 1 December 2005
ER -