@inproceedings{52d9ff1953eb425e916554beea1a48de,
title = "New electromigration model and its potential application on degradation simulation for FinFET SRAM",
abstract = "In this paper, a new EM model is proposed to describe the interconnect resistance change. This model consists of a time-dependent hydrostatic stress distribution and resistance shift calculations. Hydrostatic stress is obtained from the solution of material transport equations and suitable boundary conditions. The resistance shift is calculated from the stress distribution, atomic divergence, and a special resistance evaluation methodology. Then the calibrated EM model is applied to simulation for a FinFET SRAM array while considering process parameter variations. EM effects on SRAM performance degradation are analyzed.",
keywords = "Electromigration, FinFET, Hydrostatic Stress, Performance Degradation, Resistance Model, SRAM",
author = "Rui Zhang and Kexin Yang and Taizhi Liu and Linda Milor",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 ; Conference date: 07-10-2018 Through 11-10-2018",
year = "2018",
month = oct,
doi = "10.1109/IIRW.2018.8727106",
language = "English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2018 IEEE International Integrated Reliability Workshop, IIRW 2018",
address = "United States",
}