Negative terahertz dynamic conductivity in electrically induced lateral p-i-n junction in graphene

Victor Ryzhii; Maxim Ryzhii; Michael S. Shur; Vladimir Mitin

doi:10.1016/j.physe.2009.11.032

Negative terahertz dynamic conductivity in electrically induced lateral p-i-n junction in graphene

Victor Ryzhii
, Maxim Ryzhii
, Michael S. Shur
, Vladimir Mitin

Department of Electrical Engineering

The University of Aizu
Rensselaer Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators.

Original language	English
Pages (from-to)	719-721
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	42
Issue number	4
DOIs	https://doi.org/10.1016/j.physe.2009.11.032
State	Published - Feb 2010

Keywords

Dynamic conductivity
Graphene
Plasma oscillations
Terahertz radiation
Transit-time device
Tunneling

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10.1016/j.physe.2009.11.032

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title = "Negative terahertz dynamic conductivity in electrically induced lateral p-i-n junction in graphene",

abstract = "We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators.",

keywords = "Dynamic conductivity, Graphene, Plasma oscillations, Terahertz radiation, Transit-time device, Tunneling",

author = "Victor Ryzhii and Maxim Ryzhii and Shur, \{Michael S.\} and Vladimir Mitin",

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AU - Ryzhii, Victor

AU - Ryzhii, Maxim

AU - Shur, Michael S.

AU - Mitin, Vladimir

PY - 2010/2

Y1 - 2010/2

N2 - We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators.

AB - We analyze a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators.

KW - Dynamic conductivity

KW - Graphene

KW - Plasma oscillations

KW - Terahertz radiation

KW - Transit-time device

KW - Tunneling

UR - https://www.scopus.com/pages/publications/77149154022

U2 - 10.1016/j.physe.2009.11.032

DO - 10.1016/j.physe.2009.11.032

M3 - Article

AN - SCOPUS:77149154022

SN - 1386-9477

VL - 42

SP - 719

EP - 721

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 4

ER -

Negative terahertz dynamic conductivity in electrically induced lateral p-i-n junction in graphene

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Keywords

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