Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

J. Černe; J. Kono; T. Inoshita; M. Sherwin; M. Sundaram; A. C. Gossard

doi:10.1063/1.119227

Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

J. Černe
, J. Kono
, T. Inoshita
, M. Sherwin
, M. Sundaram
, A. C. Gossard

Physics

Japan Science and Technology Agency
University of California at Santa Barbara
National Aeronautics and Space Administration

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency ω_nir and intense far-infrared (FIR) radiation from a free-electron laser at ω_fir. Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at ω_sideband=ω_nir±2ω_fir. The intensity of the sidebands is enhanced when either ω_sideband or ω_niris near the onset of NIR absorption in the quantum well, or when ω_fir is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100.

Original language	English
Pages (from-to)	3543-3545
Number of pages	3
Journal	Applied Physics Letters
Volume	70
Issue number	26
DOIs	https://doi.org/10.1063/1.119227
State	Published - Jun 30 1997

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title = "Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells",

abstract = "GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency ωnir and intense far-infrared (FIR) radiation from a free-electron laser at ωfir. Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at ωsideband=ωnir±2ωfir. The intensity of the sidebands is enhanced when either ωsideband or ωniris near the onset of NIR absorption in the quantum well, or when ωfir is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100.",

author = "J. {\v C}erne and J. Kono and T. Inoshita and M. Sherwin and M. Sundaram and Gossard, \{A. C.\}",

year = "1997",

month = jun,

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doi = "10.1063/1.119227",

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journal = "Applied Physics Letters",

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T1 - Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

AU - Černe, J.

AU - Kono, J.

AU - Inoshita, T.

AU - Sherwin, M.

AU - Sundaram, M.

AU - Gossard, A. C.

PY - 1997/6/30

Y1 - 1997/6/30

N2 - GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency ωnir and intense far-infrared (FIR) radiation from a free-electron laser at ωfir. Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at ωsideband=ωnir±2ωfir. The intensity of the sidebands is enhanced when either ωsideband or ωniris near the onset of NIR absorption in the quantum well, or when ωfir is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100.

AB - GaAs quantum wells are simultaneously illuminated with near-infrared (NIR) radiation at frequency ωnir and intense far-infrared (FIR) radiation from a free-electron laser at ωfir. Magnetic fields up to 9 T are applied. Strong and narrow sidebands are observed at ωsideband=ωnir±2ωfir. The intensity of the sidebands is enhanced when either ωsideband or ωniris near the onset of NIR absorption in the quantum well, or when ωfir is near the free-electron cyclotron frequency. We attribute these sidebands to four-wave mixing of NIR and FIR photons whose energies differ by more than a factor of 100.

UR - https://www.scopus.com/pages/publications/0000086870

U2 - 10.1063/1.119227

DO - 10.1063/1.119227

M3 - Article

AN - SCOPUS:0000086870

SN - 0003-6951

VL - 70

SP - 3543

EP - 3545

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells

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