Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells

W. J. Li; S. Holmes; W. Trzeciakowski; B. D. McCombe; X. Liu; A. Petrou; M. Dutta; P. G. Newman; W. Schaff

doi:10.1016/0749-6036(90)90083-J

Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells

W. J. Li
, S. Holmes
, W. Trzeciakowski
, B. D. McCombe
, X. Liu
, A. Petrou
, M. Dutta
, P. G. Newman
, W. Schaff

Physics

SUNY Buffalo
EDTL
Cornell University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the effect on the confinement subband energies of thin (two monolayers) AlAs barriers positioned at the centers of the GaAs layers in a GaAs/AlGaAs multiple-quantum-well structure. Interband as well as interconduction-subband transitions from two structures, one with, and the other without the thin AlAs barriers were studied by reflectance, photoluminescence and far-infrared magneto-transmission spectroscopies. The results are in good agreement with one-dimensional calculations, and are indicative of the high quality of the thin barriers.

Original language	English
Pages (from-to)	163-166
Number of pages	4
Journal	Superlattices and Microstructures
Volume	8
Issue number	2
DOIs	https://doi.org/10.1016/0749-6036(90)90083-J
State	Published - 1990

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title = "Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells",

abstract = "We have investigated the effect on the confinement subband energies of thin (two monolayers) AlAs barriers positioned at the centers of the GaAs layers in a GaAs/AlGaAs multiple-quantum-well structure. Interband as well as interconduction-subband transitions from two structures, one with, and the other without the thin AlAs barriers were studied by reflectance, photoluminescence and far-infrared magneto-transmission spectroscopies. The results are in good agreement with one-dimensional calculations, and are indicative of the high quality of the thin barriers.",

author = "Li, \{W. J.\} and S. Holmes and W. Trzeciakowski and McCombe, \{B. D.\} and X. Liu and A. Petrou and M. Dutta and Newman, \{P. G.\} and W. Schaff",

year = "1990",

doi = "10.1016/0749-6036(90)90083-J",

language = "English",

volume = "8",

pages = "163--166",

journal = "Superlattices and Microstructures",

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TY - JOUR

T1 - Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells

AU - Li, W. J.

AU - Holmes, S.

AU - Trzeciakowski, W.

AU - McCombe, B. D.

AU - Liu, X.

AU - Petrou, A.

AU - Dutta, M.

AU - Newman, P. G.

AU - Schaff, W.

PY - 1990

Y1 - 1990

N2 - We have investigated the effect on the confinement subband energies of thin (two monolayers) AlAs barriers positioned at the centers of the GaAs layers in a GaAs/AlGaAs multiple-quantum-well structure. Interband as well as interconduction-subband transitions from two structures, one with, and the other without the thin AlAs barriers were studied by reflectance, photoluminescence and far-infrared magneto-transmission spectroscopies. The results are in good agreement with one-dimensional calculations, and are indicative of the high quality of the thin barriers.

AB - We have investigated the effect on the confinement subband energies of thin (two monolayers) AlAs barriers positioned at the centers of the GaAs layers in a GaAs/AlGaAs multiple-quantum-well structure. Interband as well as interconduction-subband transitions from two structures, one with, and the other without the thin AlAs barriers were studied by reflectance, photoluminescence and far-infrared magneto-transmission spectroscopies. The results are in good agreement with one-dimensional calculations, and are indicative of the high quality of the thin barriers.

UR - https://www.scopus.com/pages/publications/44949266299

U2 - 10.1016/0749-6036(90)90083-J

DO - 10.1016/0749-6036(90)90083-J

M3 - Article

AN - SCOPUS:44949266299

SN - 0749-6036

VL - 8

SP - 163

EP - 166

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Narrow barriers and tailored confinement states in GaAs AlGaAs quantum wells

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