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Nanotwins and stacking faults in high-strength epitaxial Ag/Al multilayer films

  • D. Bufford
  • , Z. Bi
  • , Q. X. Jia
  • , H. Wang
  • , X. Zhang
  • Texas A&M University
  • Los Alamos National Laboratory

Research output: Contribution to journalArticlepeer-review

113 Scopus citations

Abstract

Epitaxial Ag/Al multilayer films have high hardness (up to 5.5 GPa) in comparison to monolithic Ag and Al films (2 and 1 GPa). High-density nanotwins and stacking faults appear in both Ag and Al layers, and stacking fault density in Al increases sharply with decreasing individual layer thickness, h. Hardness increases monotonically with decreasing h, with no softening. In comparison, epitaxial Cu/Ni multilayers reach similar peak hardness when h ≈ 5 nm, but soften at smaller h. High strength in Ag/Al films is primarily a result of layer interfaces, nanotwins, and stacking faults, which are strong barriers to dislocation transmission.

Original languageEnglish
Article number223112
JournalApplied Physics Letters
Volume101
Issue number22
DOIs
StatePublished - Nov 26 2012

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