@inproceedings{340041fdbdd74b3685abd87f886f45da,
title = "Nanoscale optimization of quantum dot media for effective photovoltaic conversion",
abstract = "Nanoscale engineering of band profile and potential profile provide effective tools for the management of photoelectron processes in quantum dot (QD) photovoltaic devices. We investigate the QD devices with various 1-μm InAs /GaAs QD media placed in a 3-μm base GaAs p-n junction. We found that n-charging of quantum dots (QDs) create potential barriers around QDs. QD growth between ultrathin AlGaAs layers leads to the formation of AlGaAs {"}fence{"} barriers, and reduces the wetting layers (WLs). The barriers around QDs and reduction of the wetting layer substantially suppress recombination processes via QDs. The n-doping of interdot space in QD media enhances electron extraction from QDs. All of our QD devices show short-circuit current, JSC, higher than that of the reference cell, but smaller open-circuit voltage, VOC. In the QD devices, the short circuit currents increase by °0.1 mA/cm2 per dot layer. JSC reaches 28.4 mA/cm2 in the device with QD media that combines dot charging, fence barriers, and WL reduction.",
keywords = "Carrier capture, Photovoltaic, Quantum dots, Wetting layer",
author = "Sablon, \{K. A.\} and A. Sergeev and Little, \{J. W.\} and N. Vagidov and V. Mitin",
year = "2014",
doi = "10.1117/12.2051345",
language = "English",
isbn = "9781628410204",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Micro- and Nanotechnology Sensors, Systems, and Applications VI",
address = "United States",
note = "Micro- and Nanotechnology Sensors, Systems, and Applications VI ; Conference date: 05-05-2014 Through 09-05-2014",
}