N-type doping of the diluted magnetic semiconductor Zn1-xMnxSe

H. Abad; B. T. Jonker; W. Y. Yu; S. Stoltz; A. Petrou

doi:10.1063/1.113957

N-type doping of the diluted magnetic semiconductor Zn_1-xMn_xSe

H. Abad
, B. T. Jonker
, W. Y. Yu
, S. Stoltz
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We report on the intentional n-type doping of the diluted magnetic semiconductor Zn_1-xMn_xSe using ZnCl₂ as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 10¹⁸cm^-3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.

Original language	English
Pages (from-to)	2412
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.113957
State	Published - 1995

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title = "N-type doping of the diluted magnetic semiconductor Zn1-xMnxSe",

abstract = "We report on the intentional n-type doping of the diluted magnetic semiconductor Zn1-xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018cm-3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.",

author = "H. Abad and Jonker, \{B. T.\} and Yu, \{W. Y.\} and S. Stoltz and A. Petrou",

year = "1995",

doi = "10.1063/1.113957",

language = "English",

pages = "2412",

journal = "Applied Physics Letters",

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T1 - N-type doping of the diluted magnetic semiconductor Zn1-xMnxSe

AU - Abad, H.

AU - Jonker, B. T.

AU - Yu, W. Y.

AU - Stoltz, S.

AU - Petrou, A.

PY - 1995

Y1 - 1995

N2 - We report on the intentional n-type doping of the diluted magnetic semiconductor Zn1-xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018cm-3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.

AB - We report on the intentional n-type doping of the diluted magnetic semiconductor Zn1-xMnxSe using ZnCl2 as the dopant source. Samples with varying Mn concentrations and carrier densities were grown by molecular beam epitaxy and characterized using Hall effect, x-ray diffraction, and photoluminescence measurements. Net carrier concentrations in excess of 1018cm-3 are readily obtained for x≤0.08. Useful carrier densities can be achieved for Mn concentrations x≤0.15, above which the samples are highly insulating. The controlled doping of this alloy provides another material for use in the fabrication of wide gap semiconductor device structures.

UR - https://www.scopus.com/pages/publications/36449007543

U2 - 10.1063/1.113957

DO - 10.1063/1.113957

M3 - Article

AN - SCOPUS:36449007543

SN - 0003-6951

SP - 2412

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

N-type doping of the diluted magnetic semiconductor Zn_1-xMn_xSe

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