TY - GEN
T1 - Morphological changes while growing nickel monosilicide nanowires
AU - Kim, Joondong
AU - Anderson, Wayne A.
AU - Guliants, Elena A.
AU - Bunker, Christopher E.
PY - 2004
Y1 - 2004
N2 - Nickel monosilicide (NiSi) nanowires (NWs) have been fabricated in a DC magnetron system by the Melal Induced Growth (MIG) method. The NW growing stages were sequentially observed by scanning electron microscopy. Deposited Ni on SiO2 coated Si wafers has been first grooved and agglomerated by thermal heating at 575°C. In the sputtering procedure, Ni as a catalyst reacted with sputtered Si forming clusters, Nanowires were grown in the same directions on each cluster. Raman spectroscopy and Energy Dispersive Spectroscopy indicated the NW composition as NiSi. The linear propagating property of NWs was used to form self-assembled nanobridges (NBs) in trenched Si wafers. The affinity of NWs can be used on various substrate materials with less thermal damage. NiSi composed MIG-NBs are promising candidates as nanoscale contacts due to the features of low resistivity and low temperature processing giving less potential damage on fabricated structures.
AB - Nickel monosilicide (NiSi) nanowires (NWs) have been fabricated in a DC magnetron system by the Melal Induced Growth (MIG) method. The NW growing stages were sequentially observed by scanning electron microscopy. Deposited Ni on SiO2 coated Si wafers has been first grooved and agglomerated by thermal heating at 575°C. In the sputtering procedure, Ni as a catalyst reacted with sputtered Si forming clusters, Nanowires were grown in the same directions on each cluster. Raman spectroscopy and Energy Dispersive Spectroscopy indicated the NW composition as NiSi. The linear propagating property of NWs was used to form self-assembled nanobridges (NBs) in trenched Si wafers. The affinity of NWs can be used on various substrate materials with less thermal damage. NiSi composed MIG-NBs are promising candidates as nanoscale contacts due to the features of low resistivity and low temperature processing giving less potential damage on fabricated structures.
UR - https://www.scopus.com/pages/publications/30544449375
U2 - 10.1557/proc-854-u5.10
DO - 10.1557/proc-854-u5.10
M3 - Conference contribution
AN - SCOPUS:30544449375
SN - 1558998063
SN - 9781558998063
T3 - Materials Research Society Symposium Proceedings
SP - 89
EP - 94
BT - Stability of Thin Films and Nanostructures
PB - Materials Research Society
T2 - 2004 MRS Fall Meeting
Y2 - 29 November 2004 through 3 December 2004
ER -