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Monte-Carlo modeling of photoelectron kinetics in quantum-dot photodetectors

  • SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Using Monte-Carlo method, we simulate kinetics and transport of electrons in different types of InAs/GaAs quantum-dot infrared photodetectors. Our simulation program exploits Γ-L-X model of the conduction band of semiconductor and it includes three major types of electron scattering on: 1) acoustic phonons, 2) polar optical phonons, and 3) intervalley phonons. The results of simulation demonstrate that the combination of local potential barriers around quantum dots and quantum-dot structure with collective barriers can be used to achieve long carrier lifetimes, and therefore high photoconductive gain, responsivity, and detectivity.

Original languageEnglish
Title of host publicationProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009
DOIs
StatePublished - 2009
Event2009 13th International Workshop on Computational Electronics, IWCE 2009 - Beijing, China
Duration: May 27 2009May 29 2009

Publication series

NameProceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Conference

Conference2009 13th International Workshop on Computational Electronics, IWCE 2009
Country/TerritoryChina
CityBeijing
Period05/27/0905/29/09

Keywords

  • Infrared photodetectors
  • Monte-Carlo modeling
  • Quantum-dot structures

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