Monte Carlo algorithm for generation-recombination noise in semiconductors

Lino Reggiani; Paolo Lugli; Vladimir Mitin

doi:10.1063/1.98803

Monte Carlo algorithm for generation-recombination noise in semiconductors

Lino Reggiani
, Paolo Lugli
, Vladimir Mitin

Department of Electrical Engineering

University of Modena and Reggio Emilia

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.

Original language	English
Pages (from-to)	925-927
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	12
DOIs	https://doi.org/10.1063/1.98803
State	Published - 1987

Access to Document

10.1063/1.98803

Cite this

@article{9dea5078f70d4eefb9d38226b7e05874,

title = "Monte Carlo algorithm for generation-recombination noise in semiconductors",

abstract = "We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.",

author = "Lino Reggiani and Paolo Lugli and Vladimir Mitin",

year = "1987",

doi = "10.1063/1.98803",

language = "English",

volume = "51",

pages = "925--927",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Monte Carlo algorithm for generation-recombination noise in semiconductors

AU - Reggiani, Lino

AU - Lugli, Paolo

AU - Mitin, Vladimir

PY - 1987

Y1 - 1987

N2 - We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.

AB - We present an original Monte Carlo procedure to account for generation-recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.

UR - https://www.scopus.com/pages/publications/0348189441

U2 - 10.1063/1.98803

DO - 10.1063/1.98803

M3 - Article

AN - SCOPUS:0348189441

SN - 0003-6951

VL - 51

SP - 925

EP - 927

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Monte Carlo algorithm for generation-recombination noise in semiconductors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this