Monolayer MoS2steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection

Maomao Liu; Hemendra Nath Jaiswal; Simran Shahi; Sichen Wei; Yu Fu; Chaoran Chang; Anindita Chakravarty; Fei Yao; Huamin Li

doi:10.1109/IEDM13553.2020.9371961

Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection

Maomao Liu
, Hemendra Nath Jaiswal
, Simran Shahi
, Sichen Wei
, Yu Fu
, Chaoran Chang
, Anindita Chakravarty
, Fei Yao
, Huamin Li

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

23 Scopus citations

Abstract

Two-dimensional (2D) semiconductors such as MoS2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS2 channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	12.5.1-12.5.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371961
State	Published - Dec 12 2020
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: Dec 12 2020 → Dec 18 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 12/18/20

Access to Document

10.1109/IEDM13553.2020.9371961

Cite this

Liu, M., Jaiswal, H. N., Shahi, S., Wei, S., Fu, Y., Chang, C., Chakravarty, A., Yao, F., & Li, H. (2020). Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 12.5.1-12.5.4). Article 9371961 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371961

Liu, Maomao ; Jaiswal, Hemendra Nath ; Shahi, Simran et al. / Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 12.5.1-12.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Monolayer MoS2steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection",

abstract = "Two-dimensional (2D) semiconductors such as MoS2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS2 channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).",

author = "Maomao Liu and Jaiswal, \{Hemendra Nath\} and Simran Shahi and Sichen Wei and Yu Fu and Chaoran Chang and Anindita Chakravarty and Fei Yao and Huamin Li",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

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doi = "10.1109/IEDM13553.2020.9371961",

language = "English",

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Liu, M, Jaiswal, HN, Shahi, S, Wei, S, Fu, Y, Chang, C, Chakravarty, A, Yao, F & Li, H 2020, Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371961, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 12.5.1-12.5.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371961

Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection. / Liu, Maomao; Jaiswal, Hemendra Nath; Shahi, Simran et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 12.5.1-12.5.4 9371961 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Liu, Maomao

AU - Jaiswal, Hemendra Nath

AU - Shahi, Simran

AU - Wei, Sichen

AU - Fu, Yu

AU - Chang, Chaoran

AU - Chakravarty, Anindita

AU - Yao, Fei

AU - Li, Huamin

PY - 2020/12/12

Y1 - 2020/12/12

N2 - Two-dimensional (2D) semiconductors such as MoS2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS2 channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).

AB - Two-dimensional (2D) semiconductors such as MoS2 are promising material candidates for next-generation energy-efficient nanoelectronics. For the first time, a 2D steep-slope field-effect transistor (FET) based on novel Dirac-source electron injection (DSEI) was demonstrated where monolayer graphene (Gr) source injects cold electrons to monolayer MoS2 channel. As an innovative steep transistor concept, this atomic-thin 2D DSEI-FET shows the minimum subthreshold swing (SS) of 29 mV/decade and, more importantly, a record-high sub-60-mV/decade current density (over 1 μA/μm) compared to any state-of-the-art 2D or three-dimensional (3D) tunneling FETs (TFETs) or negative capacitance FETs (NCFETs).

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T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 12.5.1-12.5.4

BT - 2020 IEEE International Electron Devices Meeting, IEDM 2020

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

Y2 - 12 December 2020 through 18 December 2020

ER -

Liu M, Jaiswal HN, Shahi S, Wei S, Fu Y, Chang C et al. Monolayer MoS₂steep-slope transistors with record-high sub-60-mV/decade current density using dirac-source electron injection. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 12.5.1-12.5.4. 9371961. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371961