Molecular-dynamics calculation of the recombination cross section at ionized impurities in semiconductors

Lino Reggiani; Luca Varani; Vladimir Mitin; Carolyne M. Vanvliet

doi:10.1103/PhysRevLett.63.1094

Molecular-dynamics calculation of the recombination cross section at ionized impurities in semiconductors

Lino Reggiani
, Luca Varani
, Vladimir Mitin
, Carolyne M. Vanvliet

Department of Electrical Engineering

University of Modena and Reggio Emilia
University of Montreal

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We present a novel first-principles calculation of the microscopic and macroscopic capture cross sections due to acoustic-phonon processes. The role of excited levels in determining the recombination is naturally included and found to be of main importance at increasing lattice temperatures. Numerical results compare favorable with available experiments.

Original language	English
Pages (from-to)	1094-1097
Number of pages	4
Journal	Physical Review Letters
Volume	63
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevLett.63.1094
State	Published - 1989

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title = "Molecular-dynamics calculation of the recombination cross section at ionized impurities in semiconductors",

abstract = "We present a novel first-principles calculation of the microscopic and macroscopic capture cross sections due to acoustic-phonon processes. The role of excited levels in determining the recombination is naturally included and found to be of main importance at increasing lattice temperatures. Numerical results compare favorable with available experiments.",

author = "Lino Reggiani and Luca Varani and Vladimir Mitin and Vanvliet, \{Carolyne M.\}",

year = "1989",

doi = "10.1103/PhysRevLett.63.1094",

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T1 - Molecular-dynamics calculation of the recombination cross section at ionized impurities in semiconductors

AU - Reggiani, Lino

AU - Varani, Luca

AU - Mitin, Vladimir

AU - Vanvliet, Carolyne M.

PY - 1989

Y1 - 1989

N2 - We present a novel first-principles calculation of the microscopic and macroscopic capture cross sections due to acoustic-phonon processes. The role of excited levels in determining the recombination is naturally included and found to be of main importance at increasing lattice temperatures. Numerical results compare favorable with available experiments.

AB - We present a novel first-principles calculation of the microscopic and macroscopic capture cross sections due to acoustic-phonon processes. The role of excited levels in determining the recombination is naturally included and found to be of main importance at increasing lattice temperatures. Numerical results compare favorable with available experiments.

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U2 - 10.1103/PhysRevLett.63.1094

DO - 10.1103/PhysRevLett.63.1094

M3 - Article

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SN - 0031-9007

VL - 63

SP - 1094

EP - 1097

JO - Physical Review Letters

JF - Physical Review Letters

IS - 10

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Molecular-dynamics calculation of the recombination cross section at ionized impurities in semiconductors

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