Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

H. Luo; N. Samarth; F. C. Zhang; A. Pareek; M. Dobrowolska; J. K. Furdyna; K. Mahalingam; N. Otsuka; W. C. Chou; A. Petrou; S. B. Qadri

doi:10.1063/1.105090

Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

H. Luo
, N. Samarth
, F. C. Zhang
, A. Pareek
, M. Dobrowolska
, J. K. Furdyna
, K. Mahalingam
, N. Otsuka
, W. C. Chou
, A. Petrou
, S. B. Qadri

Physics

University of Notre Dame
Purdue University
SUNY Buffalo
Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.

Original language	English
Pages (from-to)	1783-1785
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	16
DOIs	https://doi.org/10.1063/1.105090
State	Published - 1991

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title = "Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe",

abstract = "We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3\%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7\% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.",

author = "H. Luo and N. Samarth and Zhang, \{F. C.\} and A. Pareek and M. Dobrowolska and Furdyna, \{J. K.\} and K. Mahalingam and N. Otsuka and Chou, \{W. C.\} and A. Petrou and Qadri, \{S. B.\}",

year = "1991",

doi = "10.1063/1.105090",

language = "English",

volume = "58",

pages = "1783--1785",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Molecular beam epitaxy of a low strain II-VI heterostructure

T2 - ZnTe/CdSe

AU - Luo, H.

AU - Samarth, N.

AU - Zhang, F. C.

AU - Pareek, A.

AU - Dobrowolska, M.

AU - Furdyna, J. K.

AU - Mahalingam, K.

AU - Otsuka, N.

AU - Chou, W. C.

AU - Petrou, A.

AU - Qadri, S. B.

PY - 1991

Y1 - 1991

N2 - We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.

AB - We report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.

UR - https://www.scopus.com/pages/publications/0000578261

U2 - 10.1063/1.105090

DO - 10.1063/1.105090

M3 - Article

AN - SCOPUS:0000578261

SN - 0003-6951

VL - 58

SP - 1783

EP - 1785

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

Abstract

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