Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

Sang Yeol Lee; Yuan Li; Jang Sik Lee; J. K. Lee; M. Nastasi; S. A. Crooker; Q. X. Jia; Hong Seong Kang; Jeong Seok Kang

doi:10.1557/proc-764-c7.9

Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

Sang Yeol Lee
, Yuan Li
, Jang Sik Lee
, J. K. Lee
, M. Nastasi
, S. A. Crooker
, Q. X. Jia
, Hong Seong Kang
, Jeong Seok Kang

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division
Yonsei University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of Zn _xCd_1-xO as illustrated by Rutherford backscattering spectroscopy.

Original language	English
Pages (from-to)	413-417
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	764
DOIs	https://doi.org/10.1557/proc-764-c7.9
State	Published - 2003
Event	MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors - San Francisco, CA, United States Duration: Apr 22 2003 → Apr 24 2003

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@article{9f43461e95ae42a4b27bc16e2dd8266f,

title = "Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition",

abstract = "ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of Zn xCd1-xO as illustrated by Rutherford backscattering spectroscopy.",

author = "Lee, \{Sang Yeol\} and Yuan Li and Lee, \{Jang Sik\} and Lee, \{J. K.\} and M. Nastasi and Crooker, \{S. A.\} and Jia, \{Q. X.\} and Kang, \{Hong Seong\} and Kang, \{Jeong Seok\}",

year = "2003",

doi = "10.1557/proc-764-c7.9",

language = "English",

volume = "764",

pages = "413--417",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors ; Conference date: 22-04-2003 Through 24-04-2003",

}

TY - JOUR

T1 - Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

AU - Lee, Sang Yeol

AU - Li, Yuan

AU - Lee, Jang Sik

AU - Lee, J. K.

AU - Nastasi, M.

AU - Crooker, S. A.

AU - Jia, Q. X.

AU - Kang, Hong Seong

AU - Kang, Jeong Seok

PY - 2003

Y1 - 2003

N2 - ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of Zn xCd1-xO as illustrated by Rutherford backscattering spectroscopy.

AB - ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of Zn xCd1-xO as illustrated by Rutherford backscattering spectroscopy.

UR - https://www.scopus.com/pages/publications/0344065590

U2 - 10.1557/proc-764-c7.9

DO - 10.1557/proc-764-c7.9

M3 - Conference article

AN - SCOPUS:0344065590

SN - 0272-9172

VL - 764

SP - 413

EP - 417

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS: New Applications for Wide-Bandgap Semiconductors

Y2 - 22 April 2003 through 24 April 2003

ER -

Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

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