Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers

C. Parks; A. K. Ramdas; M. R. Melloch; G. Steblovsky; L. R. Ram-Mohan; H. Luo

doi:10.1116/1.587934

Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers

C. Parks
, A. K. Ramdas
, M. R. Melloch
, G. Steblovsky
, L. R. Ram-Mohan
, H. Luo

Physics

Purdue University

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

In a surface quantum well, realized by a structure such as vacuum/GaAs/Al_xGa_1-xAs fabricated by molecular beam epitaxy, electronic states can experience quantum confinement. In the present study the existence of such quantum confined electronic states has been demonstrated with piezo- and electromodulated reflectivity spectroscopy. Equally remarkable signatures appear in the modulated reflectivity spectra which can be traced to electronic levels localized above the Al_xGa_1-xAs single quantum barrier formed by this structure. The dependence on the barrier thickness and the wave functions of the above barrier states are similar to their bound counterparts in single quantum wells. The finite element method was used to deduce the energy levels of the surface quantum wells and quantum barriers in the empirical two-band model.

Original language	English
Pages (from-to)	657-659
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	2
DOIs	https://doi.org/10.1116/1.587934
State	Published - Mar 1995
Event	Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy - Urbana, IL, USA Duration: Oct 10 1994 → Oct 12 1994

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@article{097a5f96ad424810804d9e385372b1af,

title = "Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers",

abstract = "In a surface quantum well, realized by a structure such as vacuum/GaAs/AlxGa1-xAs fabricated by molecular beam epitaxy, electronic states can experience quantum confinement. In the present study the existence of such quantum confined electronic states has been demonstrated with piezo- and electromodulated reflectivity spectroscopy. Equally remarkable signatures appear in the modulated reflectivity spectra which can be traced to electronic levels localized above the AlxGa1-xAs single quantum barrier formed by this structure. The dependence on the barrier thickness and the wave functions of the above barrier states are similar to their bound counterparts in single quantum wells. The finite element method was used to deduce the energy levels of the surface quantum wells and quantum barriers in the empirical two-band model.",

author = "C. Parks and Ramdas, \{A. K.\} and Melloch, \{M. R.\} and G. Steblovsky and Ram-Mohan, \{L. R.\} and H. Luo",

year = "1995",

month = mar,

doi = "10.1116/1.587934",

language = "English",

volume = "13",

pages = "657--659",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "2",

note = "Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy ; Conference date: 10-10-1994 Through 12-10-1994",

}

Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers. / Parks, C.; Ramdas, A. K.; Melloch, M. R. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2, 03.1995, p. 657-659.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers

AU - Parks, C.

AU - Ramdas, A. K.

AU - Melloch, M. R.

AU - Steblovsky, G.

AU - Ram-Mohan, L. R.

AU - Luo, H.

PY - 1995/3

Y1 - 1995/3

N2 - In a surface quantum well, realized by a structure such as vacuum/GaAs/AlxGa1-xAs fabricated by molecular beam epitaxy, electronic states can experience quantum confinement. In the present study the existence of such quantum confined electronic states has been demonstrated with piezo- and electromodulated reflectivity spectroscopy. Equally remarkable signatures appear in the modulated reflectivity spectra which can be traced to electronic levels localized above the AlxGa1-xAs single quantum barrier formed by this structure. The dependence on the barrier thickness and the wave functions of the above barrier states are similar to their bound counterparts in single quantum wells. The finite element method was used to deduce the energy levels of the surface quantum wells and quantum barriers in the empirical two-band model.

AB - In a surface quantum well, realized by a structure such as vacuum/GaAs/AlxGa1-xAs fabricated by molecular beam epitaxy, electronic states can experience quantum confinement. In the present study the existence of such quantum confined electronic states has been demonstrated with piezo- and electromodulated reflectivity spectroscopy. Equally remarkable signatures appear in the modulated reflectivity spectra which can be traced to electronic levels localized above the AlxGa1-xAs single quantum barrier formed by this structure. The dependence on the barrier thickness and the wave functions of the above barrier states are similar to their bound counterparts in single quantum wells. The finite element method was used to deduce the energy levels of the surface quantum wells and quantum barriers in the empirical two-band model.

UR - https://www.scopus.com/pages/publications/0029277339

U2 - 10.1116/1.587934

DO - 10.1116/1.587934

M3 - Conference article

AN - SCOPUS:0029277339

SN - 1071-1023

VL - 13

SP - 657

EP - 659

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

T2 - Proceedings of the 14th North American Conference on Molecular-Beam Epitaxy

Y2 - 10 October 1994 through 12 October 1994

ER -

Modulated reflectivity spectroscopy of electronic states confined in surface quantum wells and above quantum barriers

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