@inproceedings{ae6861bae38f4c34afccbe46882935f9,
title = "Models for plasmonic THz detectors based on graphene split-gate FETs with lateral p-n junctions",
abstract = "We propose and analyze the resonant plasmonic terahertz detectors based on the split-gate field-effect transistors with electrically induced p-n junctions and graphene and perforated graphene channels. The perforation of the p-n junction depletion region leads to the tunneling suppression and the substantial reinforcement of the detector resonant response.",
author = "Maxim Ryzhii and Victor Ryzhii and Akira Satou and Taiichi Otsuji and Vladimir Mitin and Shur, \{Michael S.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016 ; Conference date: 06-09-2016 Through 08-09-2016",
year = "2016",
month = oct,
day = "20",
doi = "10.1109/SISPAD.2016.7605221",
language = "English",
series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "361--364",
editor = "Peter Pichler and Eberhard Bar and Jurgen Lorenz",
booktitle = "2016 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2016",
address = "United States",
}