Modeling of Ti:LiNb03 Waveguide Devices: Part II-S-Shaped Channel Waveguide Bends

This is the second part of the paper on the modeling of Ti-indiffused LiNb03 waveguide devices. Directly from design and fabrication parameters, we calculate performances of S-shaped channel waveguide bends by using the same formalism described in Part I [15]. We were able to calculate insertion losses of S-shaped waveguide bends in agreement with all experimental data that we found in the literature. We also studied different S-curves for short-length low-loss waveguide bend design. Results show that the widely used sine-generated S-curve does not provide lower insertion loss than other S-curves.