Modeling of hydrogenated amorphous silicon Schottky structures using capacitance-voltage and conductance-voltage measurements

The conduction process in a-Si:H Schottky structures (metal-I-N ⁺/substrate) is controlled primarily by the intrinsic (I) layer. This layer acts as a photoconductive insulator sandwiched between the bottom injecting contact and top blocking contact. A model incorporating this dual behavior of the I layer has been proposed to develop equations for the terminal dark current, capacitance (C), and conductance-voltage (G-V) characteristics of these structures. The results of dark C-V and G-V computations have been compared with the experimental data. The basic features of dark and illuminated G-V and illuminated C-V data have also been explained on the basis of this model.